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DTB133HS PDF预览

DTB133HS

更新时间: 2024-09-23 22:49:07
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管数字晶体管开关
页数 文件大小 规格书
1页 56K
描述
Digital transistors (built-in resistors)

DTB133HS 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.75Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 3最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):56JESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
VCEsat-Max:0.3 VBase Number Matches:1

DTB133HS 数据手册

  
DTB133HK / DTB133HS  
Transistors  
Digital transistors (built-in resistors)  
DTB133HK / DTB133HS  
!Features  
!External dimensions (Units : mm)  
1) Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistors.  
2) The bias resistors consist of thin-film resistors with complete  
isolation to allow positive biasing of the input, and parasitic  
effects are almost completely eliminated.  
DTB133HK  
1.6  
2.8  
3) Only the on/off conditions need to be set for operation, making  
device design easy.  
0.3to0.6  
4) Higher mounting densities can be achieved.  
Each lead has same dimensions  
ROHM : SMT3  
EIAJ : SC-59  
(1) Emitter(Source)  
(2) Base(Gate)  
(3) Collector(Drain)  
!Absolute maximum ratings (Ta = 25°C)  
DTB133HS  
Parameter  
Supply voltage  
Symbol  
Limits  
Unit  
V
4
2
V
CC  
50  
20  
V
Input voltage  
V
I
6
500  
200  
Output current  
I
C
mA  
mW  
0.45  
DTB133HK  
DTB133HS  
Power  
dissipation  
Pd  
300  
0.45  
2.5 0.5  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
5
2
Tstg  
55~150  
( )  
1
(
)
(
)
3
Taping specifications  
(1) Emitter  
(2) Collector  
(3) Base  
ROHM : SPT  
EIAJ : SC-72  
!Package, marking, and packaging specifications  
!Circuit schematic  
Part No.  
Package  
DTB133HK  
SMT3  
G98  
DTB133HS  
R
1
OUT  
IN  
SPT  
-
R
2
Marking  
GND (+)  
OUT  
Packaging code  
Basic ordering unit (pieces)  
T146  
TP  
3000  
5000  
IN  
GND (+)  
!Electrical characteristics (Ta = 25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Conditions  
= 100µA  
V
I(off)  
I(on)  
-
2  
-
-
0.3  
-
V
V
CC = 5V , I  
O
Input voltage  
V
-
0.1  
-
O
= 0.3V , I  
O
= 20mA  
= 2.5mA  
V
O(on)  
0.3  
2.4  
0.5  
-
V
mA  
µA  
-
I
O
= 50mA , I  
= 5V  
I
Output voltage  
Input current  
I
I
-
V
I
I
O(off)  
-
-
V
CC = 50V , VI = 0V  
Output current  
DC current gain  
Input resistance  
Resistance ratio  
Transition frequency  
G
I
56  
2.31  
2.4  
-
-
I
O
= 50mA , V  
O
= 5V  
R1  
3.3  
3
4.29  
3.7  
-
kΩ  
-
-
R2/R1  
-
f
T
200  
MHz  
V
CE = 10V , I  
E
= 5mA , f = 100MHz  
Transition frequency of the device.  

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