Datasheet > DTA143TM

DTA143TM

更新时间： 2024-09-25 12:49:19

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
3页	209K
描述
PNP Small Signal Transistor

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中文翻译

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数据手册

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DTA143TM 数据手册

DTA143 TM/TE/TUA/TCA/TSA

PNP Small Signal Transistor

Small Signal Product

Features

Equivalent Circuit

◇ Built-in bias resistors enable the configuration of an inverter

circuit without connecting external input resistor

(see equivalent circuit).

◇ The bias resistors consist of thin-film resistors with

complete isolation to allow negative biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

◇ Only the on/off conditions need to be set for

operation, marking device design easy.

◇ Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code.

Ordering Information (example)

Packing code

(Green)

Part No.

Package

SOT-723

Packing

Packing code

Marking

Manufacture code

RMG

DTA143 TM

8K / 7" Reel

Note : Detail please see "Ordering Information(detail, example)" below.

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Value

TUA / TCA

200

Symbol

Unit

Parameter

TSA

300

Power Dissipation

P_D

100

150

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_C

-50

-5

Collector Current

-100

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to + 150

Notes : 1. Valid provided that electrodes are kept at ambient temperature

Condtion

Symbol

Min

-50

-5

Typ

Max

Unit

Parameter

Ic= -50μA , I_E=0

Ic= -1mA , I_B=0

I_E= -50μA , I_C=0

V_CB= -50V , I_E=0

V_EB= -4V , I_C=0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-0.5

-0.3

600

6.11

μA

I_EBO

I_C= -5mA , I_B= -0.25mA

V_CE= -5V , I_C= -1mA

V_CE(sat)

h_FE

Input Resistance

100

Resistance Ratio

R₁

3.29

4.7

KΩ

V_CE= -10V , I_E=5mA , f=100MHz

Transition Frequency

f_T

250

MHz

Version : B13

12 3

中文翻译

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