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DS1626S PDF预览

DS1626S

更新时间: 2024-02-17 16:46:19
品牌 Logo 应用领域
美信 - MAXIM 输出元件传感器换能器
页数 文件大小 规格书
12页 122K
描述
Serial Switch/Digital Sensor, 12 Bit(s), 0.50Cel, Rectangular, Surface Mount, SOIC-8

DS1626S 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:SOIC-8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.28
最大精度(摄氏度):0.5 Cel主体宽度:5.285 mm
主体高度:1.905 mm主体长度或直径:5.31 mm
安装特点:SURFACE MOUNT位数:12
最高工作温度:125 °C最低工作温度:-55 °C
输出接口类型:3-WIRE INTERFACE封装形状/形式:RECTANGULAR
传感器/换能器类型:TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL最大供电电压:5.5 V
最小供电电压:2.7 V表面贴装:YES
端接类型:SOLDERBase Number Matches:1

DS1626S 数据手册

 浏览型号DS1626S的Datasheet PDF文件第1页浏览型号DS1626S的Datasheet PDF文件第2页浏览型号DS1626S的Datasheet PDF文件第3页浏览型号DS1626S的Datasheet PDF文件第5页浏览型号DS1626S的Datasheet PDF文件第6页浏览型号DS1626S的Datasheet PDF文件第7页 
DS1626/DS1726  
EEPROM AC ELECTRICAL CHARACTERISTICS  
(VDD = 2.7V to 5.5V, TA = -55°C to +125°C.)  
PARAMETER  
EEPROM Write Cycle Time  
EEPROM Writes  
SYMBOL CONDITIONS  
MIN  
TYP  
4
MAX UNITS  
twr  
NEEWR  
tEEDR  
10  
ms  
-55°C to +55°C  
-55°C to +55°C  
50k  
10  
Writes  
Years  
EEPROM Data Retention  
AC ELECTRICAL CHARACTERISTICS  
(VDD = 2.7V to 5.5V, TA = -55°C to +125°C.)  
PARAMETER  
SYMBOL CONDITIONS  
MIN  
TYP  
MAX UNITS  
9 bits  
93.75  
10 bits  
11 bits  
187.5  
375  
Temperature Conversion Time  
tTC  
ms  
12 bits  
750  
ns  
Data In to Clock Setup  
Clock to Data In Hold  
Clock to Data Out Delay  
Clock Low/High Time  
Clock Frequency  
Clock Rise/Fall Time  
RST to Clock Setup  
Clock to RST Hold  
RST Inactive Time  
Clock High to I/O Hi-Z  
RST Low to I/O Hi-Z  
CNV Pulse Width  
tDC  
tCDH  
tCDD  
tCL, tCH  
fCLK  
tR, tF  
tRC  
(Note 5)  
(Note 5)  
(Notes 5, 6)  
(Note 5)  
(Note 5)  
(Note 5)  
(Note 5)  
(Note 5)  
(Note 7)  
(Note 5)  
(Note 5)  
(Note 8)  
35  
40  
ns  
150  
ns  
ns  
285  
0
1.75  
500  
MHz  
ns  
100  
40  
125  
ns  
ns  
ns  
tCRH  
tRI  
tCDZ  
tRDZ  
tCNV  
CI/O  
CI  
50  
50  
ns  
ns  
250ns  
500ms  
I/O Capacitance  
Input Capacitance  
10  
5
pF  
pF  
NOTES:  
1) All voltages are referenced to ground.  
2) See Figure 2 for TYPICAL OPERATING CURVES.  
3) ISTBY, IDD specified with DQ, CLK/CNV = VDD and RST = GND.  
4) Drift data is based on a 1000hr stress test at +125°C with VDD = 5.5V.  
5) See Timing Diagrams in Figure 3. All timing is referenced to 0.7 x VDD and 0.3 x VDD.  
6) Load capacitance = 50pF.  
7) tRI must be 10ms minimum following any write command that involves the E2 memory.  
8) 250ns is the guaranteed minimum pulse width for a conversion to start, however, a smaller pulse  
width may start a conversion.  
4 of 12  

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