DR754-AP-HF PDF预览

DR754-AP-HF

更新时间: 2025-07-26 13:07:23
品牌 Logo 应用领域
美微科 - MCC 整流二极管IOT
页数 文件大小 规格书
4页 497K
描述
Rectifier Diode, 1 Phase, 1 Element, 6A, 400V V(RRM), Silicon,

DR754-AP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.69
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:O-PALF-W2湿度敏感等级:1
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:6 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:400 V
最大反向电流:10 µA表面贴装:NO
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DR754-AP-HF 数据手册

 浏览型号DR754-AP-HF的Datasheet PDF文件第2页浏览型号DR754-AP-HF的Datasheet PDF文件第3页浏览型号DR754-AP-HF的Datasheet PDF文件第4页 
M C C  
DR750  
THRU  
DR7510  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
·
·
·
Low Cost and Low Leakage  
High Current Capability  
High Surge Current Capability  
6 Amp Glass  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Passivated Rectifier  
RoHS Compliant. See ordering information)  
50 - 1000 Volts  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Maximum Ratings  
R-6  
·
·
·
Operating Temperature: -50°C to +150°C  
Storage Temperature: -50°C to +150°C  
Maximum Thermal Resistance; 10°C/W Junction To Ambient  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
100V  
200V  
400V  
600V  
Maximum Maximum  
RMS  
DC  
D
Voltage  
Blocking  
Voltage  
DR750  
DR751  
DR752  
DR754  
DR756  
DR758  
DR7510  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
DR750  
DR751  
DR752  
DR754  
DR756  
DR758  
DR7510  
140V  
280V  
420V  
560V  
700V  
A
Cathode  
800V  
1000V  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
6.0A  
TA = 60°C  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
C
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
IFM = 6.0A;  
TJ = 25°C*  
10mA  
1mA  
TJ = 25°C  
TJ = 100°C  
DIMENSIONS  
INCHES  
MAX  
MM  
DIM  
A
B
C
D
MIN  
.340  
.340  
.048  
1.000  
MIN  
8.60  
8.60  
1.20  
25.40  
MAX  
9.10  
9.10  
1.30  
---  
NOTE  
.360  
.360  
.052  
---  
Typical Junction  
Capacitance  
CJ  
100pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 4  

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