Datasheet > DMN2041LSD-13

DMN2041LSD-13

更新时间： 2024-01-13 14:18:53

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	188K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMN2041LSD-13 数据手册

DMN2041LSD

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Features

Mechanical Data

•

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

•

Case: SO-8

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.072 grams (approximate)

•

Qualified to AEC-Q101 Standards for High Reliability

SO-8

D₁

D₂

G₁

G₂

S₁

S₂

TOP VIEW

Internal Schematic

TOP VIEW

N-Channel MOSFET

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

Gate-Source Voltage

V_GSS

±12

_A= 25°C

Drain Current (Note 3)

Steady

State

7.63

4.92

I_D

T_A= 85°C

Pulsed Drain Current (Note 4)

I_DM

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 3)

Symbol

Value

1.16

Unit

P_D

107.4

°C/W

Thermal Resistance, Junction to Ambient @T_A= 25°C

Operating and Storage Temperature Range

R_θ

-55 to +150

°C

_J,T_STG

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by function temperature.

1 of 6

www.diodes.com

October 2009

DMN2041LSD

Document number: DS31964 Rev. 2 - 2

12 3 4 5 6

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