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DME50501 PDF预览

DME50501

更新时间: 2024-02-11 09:06:43
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
6页 643K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, 6 PIN

DME50501 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.76最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):210JESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

DME50501 数据手册

 浏览型号DME50501的Datasheet PDF文件第2页浏览型号DME50501的Datasheet PDF文件第3页浏览型号DME50501的Datasheet PDF文件第4页浏览型号DME50501的Datasheet PDF文件第5页浏览型号DME50501的Datasheet PDF文件第6页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DME50501  
Silicon PNP epitaxial planar type (Tr1)  
Silicon NPN epitaxial planar type (Tr2)  
For general amplication  
DME20501 in SMini6 type package  
Features  
Package  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Code  
SMini6-F3-B  
Pin Name  
1: Emitter (Tr1)  
2: Base (Tr2)  
3: Base (Tr2)  
4: Collector (Tr2)  
5: Emitter (Tr2)  
6: Collector (Tr1)  
Basic Part Number  
DSA2001 + DSC2001 (Individual)  
Marking Symbol: B1  
Internal Connection  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
(C1) (E2) (C2)  
6
5
4
Absolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Tr1 Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–60  
Unit  
V
Tr2  
Tr1  
–50  
V
1
2
3
(E1) (B1) (B2)  
–7  
V
–100  
–200  
60  
mA  
mA  
V
Peak collector current  
ICP  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Tr2 Emitter-base voltage (Collector open)  
Collector current  
VCBO  
VCEO  
VEBO  
IC  
50  
V
7
V
100  
mA  
mA  
mW  
°C  
°C  
Peak collector current  
ICP  
200  
Total power dissipation  
PT  
150  
Overall Junction temperature  
Storage temperature  
Tj  
150  
T
stg  
–55 to +150  
Publication date: April 2010  
ZJJ00744AED  
1

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