Datasheet > DGW40N65CTH

DGW40N65CTH

更新时间： 2024-03-03 10:11:20

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	406K
描述
TO-247

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DGW40N65CTH 数据手册

RoHS

DGW40N65CTH

COMPLIANT

Electrical Characteristics of the DIODE

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

, at T = 25℃

Dynamic

Reverse Recovery Current

Reverse Recovery Charge

I_rr

Q_rr

trr

0.68

128

I_F=40A,V_R=300V

di/dt= -750A/μs,

Diode reverse recovery

time

Reverse Recovery Energy

Dynamic , at Tj= 125℃

Reverse Recovery Current

Erec

0.09

I_rr

Q_rr

trr

Reverse Recovery Charge

1.21

155

I_F=40A,V_R=300V

di/dt= -750A/μs,

Diode reverse recovery

time

Reverse Recovery Energy

Dynamic , at Tj= 150℃

Reverse Recovery Current

Erec

0.20

I_rr

Q_rr

trr

Reverse Recovery Charge

1.35

158

I_F=40A,V_R=300V

di/dt= -750A/μs,

Diode reverse recovery

time

Reverse Recovery Energy

Erec

0.25

Thermal Resistance

Parameter

Symbol

Max. Value

0.49

Unit

R_th(j-c)

R_th(j-a)

K/W

IGBT Thermal Resistance, Junction - Case

Diode Thermal Resistance, Junction - Case

Thermal Resistance, Junction - Ambient

0.59

S-M351D

www.21yangjie.com

Rev.1.0, 13-May-22

1 2 345 6 7 8

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