Datasheet > DGW50N65BTH

DGW50N65BTH

更新时间： 2024-04-09 18:59:30

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
11页	868K
描述
TO-247

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数据手册

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DGW50N65BTH 数据手册

RoHS

DGW50N65BTH

COMPLIANT

IGBT Discrete

V_CE

650

I_C

V_CE(SAT)I_C=₅₀A

1.95

Applications



High frequency switching application

Medical applications

Uninterruptible power supply

Motion/servo control

Circuit

Features



Low switching losses



Maximum junction temperature 175℃

Positive temperature coefficient

High ruggedness, temperature stable

High short circuit capability(5us)

Maximum Ratings

Parameter

Symbol

V_CE

Value

650

Unit

Collector-Emitter Breakdown Voltage

DC Collector Current, limited by T_jmax

T_C= 25°C

100

I_C

T_C= 100°C

Diode Forward Current, limited by T_jmax

T_C= 25°C

I_F

T_C= 100°C

V_GE

±20

±30

Continuous Gate-Emitter Voltage

Transient Gate-Emitter Voltage

Turn off Safe Operating Area V_CE≤1200V,

T_j≤ 150°C

200

Pulsed Collector Current, V_GE=15V,

tp limited by T_jmax

I_CM

I_Fpuls

T_sc

200

120

Diode Pulsed Current, tp limited by T_jmax

Short Circuit Withstand Time,

μs

V_GE= 15V, V_CC=400V，V_CEM≤650V

Power Dissipation , Tj=175°C ,Tc=25°C

P_tot

300

S-M354D

www.21yangjie.com

Rev.1.1, 10-Aug-22

12 3 4 5 6 7...11

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