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DESC29-06AC PDF预览

DESC29-06AC

更新时间： 2024-09-25 03:29:15
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
2页 63K
描述
HiPerFRED Epitaxial Diode ISOPLUS220 Electrically Isolated Back Surface

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DESC29-06AC 数据手册

 浏览型号DESC29-06AC的Datasheet PDF文件第2页 
ADVANCE TECHNICAL INFORMATION  
DSEC29-06AC  
IFAV = 2x15 A  
VRRM = 600 V  
trr = 35 ns  
HiPerFREDTM Epitaxial Diode  
ISOPLUS220TM  
Electrically Isolated Back Surface  
VRSM  
V
VRRM  
V
Type  
ISOPLUS2
1
600  
600  
DSEC29-06AC  
2
3
1
2
3
Isolated back surface *  
* Patent pending  
Symbol  
Conditions  
Maximum Ratings  
Features  
IFRMS  
IFAVM  
35  
15  
A
A
l
Silicon chip on Direct-Copper-Bond  
substrate  
TC = 140°C; rectangular, d = 0.5  
IFSM  
EAS  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
110  
0.1  
A
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Low cathode to tab capacitance (<15pF)  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
TVJ = 25°C; non-repetitive  
IAS = 0.9 A; L = 180 µH  
mJ  
A
l
l
l
l
l
l
l
IAR  
VA = 1.5·VR typ.; f = 10 kHz; repetitive  
0.1  
TVJ  
TVJM  
Tstg  
-55...+175  
175  
-55...+150  
°C  
°C  
°C  
Soft recovery behaviour  
Epoxy meets UL 94V-0  
Ptot  
TC = 25°C  
95  
W
V~  
VISOL  
FC  
50/60 Hz RMS; IISOL ≤ 1 mA  
Mounting force  
typical  
2500  
11...65 / 2.4...11  
3
N / lb  
g
Applications  
Weight  
l
Antiparallel diode for high frequency  
switching devices  
l
Antisaturation diode  
Snubber diode  
l
Symbol  
Conditions  
Characteristic Values  
l
Free wheeling diode in converters  
and motor control circuits  
Rectifiers in switch mode power  
supplies (SMPS)  
Inductive heating  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
typ.  
max.  
IR  
Q
R
TVJ = 25°C VR = VRRM  
TVJ = 150°C VR = VRRM  
100  
0.5  
µA  
mA  
l
l
VF  
IF = 15 A;  
TVJ = 150°C  
TVJ = 25°C  
1.49  
2.04  
V
V
l
l
RthJC  
RthCH  
1.6  
K/W  
K/W  
0.6  
35  
Advantages  
trr  
IF = 1 A; -di/dt = 100 A/µs;  
VR = 30 V; TVJ = 25°C  
ns  
l
Avalanche voltage rated for reliable  
operation  
l
Soft reverse recovery for low EMI/RFI  
Low IRM reduces:  
IRM  
VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs  
TVJ = 100°C  
4
4.9  
A
l
- Power dissipation within the diode  
- Turn-on loss in the commutating  
switch  
O
Notes: Data given for T = 25 C and per diode unless otherwise specified  
VJ  
R Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %  
S Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %  
98785 (12/00)  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
12

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