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DCR1004SN0101 PDF预览

DCR1004SN0101

更新时间: 2024-02-14 19:11:09
品牌 Logo 应用领域
AMMSEMI /
页数 文件大小 规格书
4页 2266K
描述
High Power Button Capsule Thyristor

DCR1004SN0101 数据手册

 浏览型号DCR1004SN0101的Datasheet PDF文件第2页浏览型号DCR1004SN0101的Datasheet PDF文件第3页浏览型号DCR1004SN0101的Datasheet PDF文件第4页 
HighꢀPowerꢀ  
ButtonꢀCapsuleꢀ  
Thyristorꢀ  
DCR1003ꢀSeriesꢀ  
DCR1004ꢀSeriesꢀ  
IT(AV)ꢀ=ꢀ1540A  
VRRMꢀ=ꢀ1700V  
Typeꢀ  
Non-Repetitiveꢀ  
PeakꢀVoltagesꢀ  
Repetitiveꢀ  
OUTLINEꢀNꢀ  
Numberꢀ  
PeakꢀVoltagesꢀ  
VDSMꢀVRSM  
VDRMꢀVRRMꢀ  
DCR1003SN1818ꢀꢀDCR1004SN1818ꢀ  
DCR1003SN1717ꢀꢀDCR1004SN1717ꢀ  
DCR1003SN1616ꢀꢀDCR1004SN1616ꢀ  
DCR1003SN1515ꢀꢀDCR1004SN1515ꢀ  
DCR1003SN1414ꢀꢀDCR1004SN1414ꢀ  
DCR1003SN1313ꢀꢀDCR1004SN1313ꢀ  
DCR1003SN1212ꢀꢀDCR1004SN1212ꢀ  
DCR1003SN1111ꢀꢀDCR1004SN1111ꢀ  
DCR1003SN1010ꢀꢀDCR1004SN1010ꢀ  
DCR1003SN0909ꢀꢀDCR1004SN0909ꢀ  
DCR1003SN0808ꢀꢀDCR1004SN0808ꢀ  
DCR1003SN0707ꢀꢀDCR1004SN0707ꢀ  
DCR1003SN0606ꢀꢀDCR1004SN0606ꢀ  
DCR1003SN0505ꢀꢀDCR1004SN0505ꢀ  
DCR1003SN0404ꢀꢀDCR1004SN0404ꢀ  
DCR1003SN0303ꢀꢀDCR1004SN0303ꢀ  
DCR1003SN0202ꢀꢀDCR1004SN0202ꢀ  
DCR1003SN0101ꢀꢀDCR1004SN0101ꢀ  
1800ꢀ  
1700ꢀ  
1600ꢀ  
1500ꢀ  
1400ꢀ  
1300ꢀ  
1200ꢀ  
1100ꢀ  
1000ꢀ  
900ꢀ  
1700.ꢀ  
1600.ꢀ  
1500.ꢀ  
1400.ꢀ  
1300.ꢀ  
1200.ꢀ  
1100.ꢀ  
1000.ꢀ  
900.ꢀ  
800.ꢀ  
700.ꢀ  
600.ꢀ  
500.ꢀ  
400.ꢀ  
300.ꢀ  
200.ꢀ  
150.ꢀ  
75.ꢀ  
800ꢀ  
700ꢀ  
600ꢀ  
500ꢀ  
400ꢀ  
300ꢀ  
200ꢀ  
100ꢀ  
CURRENTꢀRATINGS―ꢀDOUBLEꢀSIDEꢀCOOLEDꢀ  
IT(AV)  
Meanꢀon-stateꢀcurrentꢀ  
RMSꢀvalueꢀ  
HalfꢀwaveꢀresistiveꢀloadꢀTHSꢀ=ꢀ55oCꢀ  
1540ꢀAꢀ  
2420ꢀAꢀ  
IRMS  
ITꢀ  
THSꢀ=ꢀ55oCꢀ  
Continuousꢀ(direct)ꢀon-stateꢀcurrentꢀ  
THSꢀ=ꢀ55oCꢀ  
2050ꢀAꢀ  
R(th(J-h)ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Thermalꢀresistanceꢀjunctionꢀtoꢀ  
Clampingꢀforceꢀ19.5kNꢀ  
d.c.ꢀ .026OC/Wꢀ  
Half-waveꢀ .028OC/Wꢀ  
3-phaseꢀ .030OC/Wꢀ  
heatsinkꢀsurfaceꢀ  
(withꢀmountingꢀgrease)ꢀ  
CURRENTꢀRATINGS―SINGLEꢀSIDEꢀCOOLEDꢀ  
IT(AV)ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Meanꢀon-stateꢀcurrentꢀ  
HalfꢀwaveꢀresistiveꢀloadꢀTHSꢀ=ꢀ55oCꢀ  
THSꢀ=ꢀ55oCꢀ  
870ꢀAꢀ  
1365ꢀAꢀ  
1060ꢀAꢀ  
IRMSꢀꢀꢀ  
ITꢀ  
RMSꢀvalueꢀ  
Continuousꢀ(direct)ꢀon-stateꢀcurrentꢀ  
THSꢀ=ꢀ55oCꢀ  
R(th(J-h)ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Thermalꢀresistanceꢀjunctionꢀtoꢀ  
Clampingꢀforceꢀ19.5kNꢀ  
(withꢀmountingꢀgrease)ꢀ  
d.c.ꢀ .06oC/Wꢀ  
heatsinkꢀsurfaceꢀ  
Half-waveꢀ .062oC/Wꢀ  
3-phaseꢀ .064oC/Wꢀ  
SURGEꢀRATINGSꢀ  
ITRM  
Repetitiveꢀpeakꢀon-stateꢀcurrentꢀ  
Sinusoidalꢀwaveformꢀconductionꢀangleꢀ  
ɬꢀ=ꢀ30oꢀꢀꢀTHSꢀ=ꢀ55oCꢀ  
14920ꢀAꢀ  
I2tꢀꢀꢀ  
I2tꢀforꢀfusingꢀ  
10mSꢀhalfꢀsineꢀTJꢀ=ꢀ125oCꢀ  
3mSꢀhalfꢀsineꢀTJꢀ=ꢀ125oCꢀ  
Withꢀ50%ꢀVRSMꢀTJꢀ=ꢀ125oCꢀ  
FromꢀVDꢀtoꢀ1000A,ꢀGateꢀsourceꢀ10Vꢀ  
5Ωꢀriseꢀtimeꢀ0.5µs,ꢀTJꢀ=ꢀ125oCꢀ  
Voltageꢀꢀ=ꢀ67%VDRM,ꢀTcaseꢀ=ꢀ125oCꢀ  
2205000ꢀA2secꢀ  
1540000ꢀA2secꢀ  
ITSM  
Surgeꢀ(non-repetitive)ꢀon-stateꢀcurrentꢀ  
21000ꢀAꢀ  
dlT/dtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Rateꢀofꢀriseꢀofꢀon-stateꢀcurrentꢀ  
100A/µsꢀ  
dv/dt*ꢀꢀꢀꢀꢀꢀꢀꢀꢀ Maxꢀlinearꢀrateꢀofꢀriseꢀofꢀoff-stateꢀvoltageꢀ  
*Higherꢀvaluesꢀavailable.ꢀ  
300ꢀV/ꢀµsꢀ  
GATEꢀRATINGSꢀ  
VFGM  
VFGN  
VRGM  
Peakꢀforwardꢀgateꢀvoltageꢀ  
Peakꢀforwardꢀgateꢀvoltageꢀ  
Peakꢀreverseꢀgateꢀvoltageꢀ  
Peakꢀforwardꢀgateꢀcurrentꢀ  
Peakꢀgateꢀpowerꢀ  
Anodeꢀpositiveꢀwithꢀrespectꢀtoꢀcathodeꢀ  
30ꢀVꢀ  
0.25ꢀVꢀ  
5ꢀVꢀ  
Anodeꢀnegativeꢀwithꢀrespectꢀtoꢀcathodeꢀ  
IFGM  
PGM  
PGꢀ  
Anodeꢀpositiveꢀwithꢀrespectꢀtoꢀcathodeꢀ  
10ꢀAꢀ  
150ꢀWꢀ  
10ꢀWꢀ  
135OCꢀ  
125OCꢀ  
Pulseꢀwidthꢀ=ꢀ100µꢀ  
Meanꢀgateꢀpowerꢀ  
TEMPERATUREꢀ&ꢀFREQUENCYꢀRATINGSꢀ  
TVJ  
Virtualꢀjunctionꢀtemperatureꢀ  
On-stateꢀ(conduction)ꢀ  
Off-stateꢀ(blocking)ꢀ  
Tstg  
Fꢀꢀꢀ  
Storageꢀtemperatureꢀrangeꢀ  
Frequencyꢀrangeꢀ  
-55ꢀtoꢀ 125ꢀOCꢀ  
10ꢀtoꢀ 400ꢀHzꢀ  
DocumentꢀPageꢀ1ꢀofꢀ4ꢀ  
Tel.ꢀ1-973-377-9566ꢀꢀꢀFax.ꢀ1-973-377-3078ꢀ  
133ꢀKingsꢀRoadꢀ  
ꢀꢀꢀꢀ Madison,ꢀNewꢀJerseyꢀꢀ07940ꢀ  
UnitedꢀStatesꢀofꢀAmericaꢀ  
Revisedꢀ05/2016ꢀ  
DEKRAꢀCertificationꢀInc.ꢀ  
©ꢀ2016ꢀAmericanꢀMicrosemiconductor,ꢀInc.ꢀ  
Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnoticeꢀ  
www.americanmicrosemi.comꢀ  
AS9100CꢀandꢀISOꢀ9001:2008ꢀ  
CertificateꢀNo.ꢀ131519.01ꢀ  

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