Datasheet > DCR1004SN0303

DCR1004SN0303

更新时间： 2024-01-31 02:58:29

品牌	Logo	应用领域
AMMSEMI		栅栅极
页数	文件大小	规格书
4页	2197K
描述
High Power Button Capsule Thyristor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

DCR1004SN0303 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
标称电路换相断开时间：	215 µs	关态电压最小值的临界上升速率：	300 V/us
最大直流栅极触发电流：	200 mA	最大直流栅极触发电压：	3.5 V
最大漏电流：	50 mA	通态非重复峰值电流：	21000 A
最大通态电压：	1.62 V	最大通态电流：	1060000 A
最高工作温度：	125 °C	最低工作温度：	-55 °C
断态重复峰值电压：	200 V	子类别：	Silicon Controlled Rectifiers
表面贴装：	NO	触发设备类型：	SCR

DCR1004SN0303 数据手册

ꢀ

HighꢀPowerꢀ

ButtonꢀCapsuleꢀ

Thyristorꢀ

DCR1003ꢀSeriesꢀ

DCR1004ꢀSeriesꢀ

I_{T(AV)ꢀ=ꢀ1540A}

ꢀ

V_{RRMꢀ=ꢀ1700V}

ꢀ

Typeꢀ

Non-Repetitiveꢀ

PeakꢀVoltagesꢀ

Repetitiveꢀ

OUTLINEꢀNꢀ

ꢀ

Numberꢀ

PeakꢀVoltagesꢀ

V_DSMꢀV_RSM

ꢀ

V_DRMꢀV_RRMꢀ

DCR1003SN1818ꢀꢀDCR1004SN1818ꢀ

DCR1003SN1717ꢀꢀDCR1004SN1717ꢀ

DCR1003SN1616ꢀꢀDCR1004SN1616ꢀ

DCR1003SN1515ꢀꢀDCR1004SN1515ꢀ

DCR1003SN1414ꢀꢀDCR1004SN1414ꢀ

DCR1003SN1313ꢀꢀDCR1004SN1313ꢀ

DCR1003SN1212ꢀꢀDCR1004SN1212ꢀ

DCR1003SN1111ꢀꢀDCR1004SN1111ꢀ

DCR1003SN1010ꢀꢀDCR1004SN1010ꢀ

DCR1003SN0909ꢀꢀDCR1004SN0909ꢀ

DCR1003SN0808ꢀꢀDCR1004SN0808ꢀ

DCR1003SN0707ꢀꢀDCR1004SN0707ꢀ

DCR1003SN0606ꢀꢀDCR1004SN0606ꢀ

DCR1003SN0505ꢀꢀDCR1004SN0505ꢀ

DCR1003SN0404ꢀꢀDCR1004SN0404ꢀ

DCR1003SN0303ꢀꢀDCR1004SN0303ꢀ

DCR1003SN0202ꢀꢀDCR1004SN0202ꢀ

DCR1003SN0101ꢀꢀDCR1004SN0101ꢀ

1800ꢀ

1700ꢀ

1600ꢀ

1500ꢀ

1400ꢀ

1300ꢀ

1200ꢀ

1100ꢀ

1000ꢀ

900ꢀ

1700.ꢀ

1600.ꢀ

1500.ꢀ

1400.ꢀ

1300.ꢀ

1200.ꢀ

1100.ꢀ

1000.ꢀ

900.ꢀ

800.ꢀ

700.ꢀ

600.ꢀ

500.ꢀ

400.ꢀ

300.ꢀ

200.ꢀ

150.ꢀ

75.ꢀ

800ꢀ

700ꢀ

600ꢀ

500ꢀ

400ꢀ

300ꢀ

200ꢀ

100ꢀ

ꢀ

CURRENTꢀRATINGS―ꢀDOUBLEꢀSIDEꢀCOOLEDꢀ

ꢀ

I_T(AV)

ꢀ

Meanꢀon-stateꢀcurrentꢀ

RMSꢀvalueꢀ

HalfꢀwaveꢀresistiveꢀloadꢀT_HSꢀ=ꢀ55^oCꢀ

1540ꢀAꢀ

2420ꢀAꢀ

I_RMS

I_Tꢀ

ꢀ

T_HSꢀ=ꢀ55^oCꢀ

Continuousꢀ(direct)ꢀon-stateꢀcurrentꢀ

T_HSꢀ=ꢀ55^oCꢀ

2050ꢀAꢀ

R_(th(J-h)ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Thermalꢀresistanceꢀjunctionꢀtoꢀ

Clampingꢀforceꢀ19.5kNꢀ

d.c.ꢀ .026^OC/Wꢀ

Half-waveꢀ .028^OC/Wꢀ

3-phaseꢀ .030^OC/Wꢀ

ꢀ

heatsinkꢀsurfaceꢀ

(withꢀmountingꢀgrease)ꢀ

ꢀ

CURRENTꢀRATINGS―SINGLEꢀSIDEꢀCOOLEDꢀ

I_T(AV)ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Meanꢀon-stateꢀcurrentꢀ

ꢀ

HalfꢀwaveꢀresistiveꢀloadꢀT_HSꢀ=ꢀ55^oCꢀ

T_HSꢀ=ꢀ55^oCꢀ

870ꢀAꢀ

1365ꢀAꢀ

1060ꢀAꢀ

I_RMSꢀꢀꢀ

I_Tꢀ

RMSꢀvalueꢀ

Continuousꢀ(direct)ꢀon-stateꢀcurrentꢀ

T_HSꢀ=ꢀ55^oCꢀ

R_(th(J-h)ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Thermalꢀresistanceꢀjunctionꢀtoꢀ

Clampingꢀforceꢀ19.5kNꢀ

(withꢀmountingꢀgrease)ꢀ

ꢀ

d.c.ꢀ .06^oC/Wꢀ

ꢀ

heatsinkꢀsurfaceꢀ

Half-waveꢀ .062^oC/Wꢀ

3-phaseꢀ .064^oC/Wꢀ

SURGEꢀRATINGSꢀ

ꢀ

I_TRM

ꢀ

Repetitiveꢀpeakꢀon-stateꢀcurrentꢀ

Sinusoidalꢀwaveformꢀconductionꢀangleꢀ

ɬꢀ=ꢀ30^oꢀꢀꢀT_HSꢀ=ꢀ55^oCꢀ

14920ꢀAꢀ

ꢀ

I²tꢀꢀꢀ

ꢀ

I²tꢀforꢀfusingꢀ

10mSꢀhalfꢀsineꢀT_Jꢀ=ꢀ125^oCꢀ

3mSꢀhalfꢀsineꢀT_Jꢀ=ꢀ125^oCꢀ

Withꢀ50%ꢀV_RSMꢀTJꢀ=ꢀ125^oCꢀ

FromꢀV_Dꢀtoꢀ1000A,ꢀGateꢀsourceꢀ10Vꢀ

5Ωꢀriseꢀtimeꢀ0.5µs,ꢀT_Jꢀ=ꢀ125^oCꢀ

Voltageꢀꢀ=ꢀ67%V_DRM,ꢀT_caseꢀ=ꢀ125^oCꢀ

ꢀ

2205000ꢀA²secꢀ

ꢀ

1540000ꢀA²secꢀ

I_TSM

ꢀ

Surgeꢀ(non-repetitive)ꢀon-stateꢀcurrentꢀ

21000ꢀAꢀ

dl_T/dt_ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Rateꢀofꢀriseꢀofꢀon-stateꢀcurrentꢀ

100A/µsꢀ

ꢀ

dv/dt*_ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ Maxꢀlinearꢀrateꢀofꢀriseꢀofꢀoff-stateꢀvoltageꢀ

*Higherꢀvaluesꢀavailable.ꢀ

300ꢀV/ꢀµsꢀ

ꢀ

GATEꢀRATINGSꢀ

ꢀ

V_FGM

V_FGN

V_RGM

ꢀ

Peakꢀforwardꢀgateꢀvoltageꢀ

Peakꢀreverseꢀgateꢀvoltageꢀ

Peakꢀforwardꢀgateꢀcurrentꢀ

Peakꢀgateꢀpowerꢀ

Anodeꢀpositiveꢀwithꢀrespectꢀtoꢀcathodeꢀ

30ꢀVꢀ

0.25ꢀVꢀ

5ꢀVꢀ

ꢀ

Anodeꢀnegativeꢀwithꢀrespectꢀtoꢀcathodeꢀ

ꢀ

I_FGM

P_GM

P_Gꢀ

ꢀ

Anodeꢀpositiveꢀwithꢀrespectꢀtoꢀcathodeꢀ

10ꢀAꢀ

150ꢀWꢀ

10ꢀWꢀ

ꢀ

135^OCꢀ

125^OCꢀ

Pulseꢀwidthꢀ=ꢀ100µꢀ

Meanꢀgateꢀpowerꢀ

ꢀ

TEMPERATUREꢀ&ꢀFREQUENCYꢀRATINGSꢀ

ꢀ

T_VJ

ꢀ

Virtualꢀjunctionꢀtemperatureꢀ

ꢀ

On-stateꢀ(conduction)ꢀ

Off-stateꢀ(blocking)ꢀ

T_stg

Fꢀꢀꢀ

ꢀ

Storageꢀtemperatureꢀrangeꢀ

Frequencyꢀrangeꢀ

ꢀ

-55ꢀtoꢀ 125^ꢀOCꢀ

10ꢀtoꢀ 400ꢀHzꢀ

ꢀ

DocumentꢀPageꢀ1ꢀofꢀ4ꢀ

Tel.ꢀ1-973-377-9566ꢀꢀꢀFax.ꢀ1-973-377-3078ꢀ

133ꢀKingsꢀRoadꢀ

ꢀꢀꢀꢀ Madison,ꢀNewꢀJerseyꢀꢀ07940ꢀ

UnitedꢀStatesꢀofꢀAmericaꢀ

ꢀ

Revisedꢀ05/2016ꢀ

DEKRAꢀCertificationꢀInc.ꢀ

Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnoticeꢀ

www.americanmicrosemi.comꢀ

AS9100CꢀandꢀISOꢀ9001:2008ꢀ

CertificateꢀNo.ꢀ131519.01ꢀ

ꢀ

12 3 4

中文翻译

下载PDF

与DCR1004SN0303相关器件

型号	品牌	获取价格	描述	数据表
DCR1004SN0404	AMMSEMI	获取价格	High Power Button Capsule Thyristor
DCR1004SN0505	AMMSEMI	获取价格	High Power Button Capsule Thyristor
DCR1004SN0606	AMMSEMI	获取价格	High Power Button Capsule Thyristor
DCR1004SN0707	AMMSEMI	获取价格	High Power Button Capsule Thyristor
DCR1004SN0808	AMMSEMI	获取价格	High Power Button Capsule Thyristor
DCR1004SN0909	AMMSEMI	获取价格	High Power Button Capsule Thyristor
DCR1004SN1111	AMMSEMI	获取价格	High Power Button Capsule Thyristor
DCR1004SN1212	AMMSEMI	获取价格	High Power Button Capsule Thyristor
DCR1004SN1313	AMMSEMI	获取价格	High Power Button Capsule Thyristor
DCR1004SN1414	AMMSEMI	获取价格	High Power Button Capsule Thyristor

与DCR1004SN0303相关文章

LTM4644/LTM4644-1：创新的四输出同步降压微模块调节器
2024-07-02

2
2N3500：一款多用途NPN硅晶体管的全面解析
2024-07-02

3
最详细资料解析：BA5917AFP参数说明、引脚说明
2024-07-02

5
MAX232IDR数据手册：产品特性、电气参数、替代型号推荐
2024-07-02

3

产品中心

服务支持

精选活动

关于我们

帮助中心

DCR1004SN0303

DCR1004SN0303 技术参数

DCR1004SN0303 数据手册

与DCR1004SN0303相关器件

与DCR1004SN0303相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DCR1004SN0303

DCR1004SN0303 技术参数

DCR1004SN0303 数据手册

与DCR1004SN0303相关器件

与DCR1004SN0303相关文章

您还可以找

您在本页遇到什么问题？