Ordering number : ENN649D
DBA40
Diffused Junction Silicon Diode
DBA40
4.0A Single-Phase Bridge Rectifier
Features
Package Dimensions
unit : mm
•
Plastic molded structure.
• Glass passivation for high reliability.
• Peak reverse voltage : V =200, 600V.
1089
RM
[DBA40]
• Average rectified current : I =4.0A.
O
7.0
25.0 min
16.5
10.0
3.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Symbol
Conditions
DBA40C
200
DBA40G
Unit
V
V
600
RM
Average Recitified Current
I
Ta=40°C
➝
➝
➝
➝
➝
2.6
4.0
A
O
Ta=40°C, mounted on a 60✕60✕1.5mm3 Al fin
A
Surge Forward Current
Junction Temperature
Storage Temperature
I
50Hz sine wave, 1 cycle
80
A
FSM
Tj
150
°C
°C
Tstg
--30 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.05
10
Forward Voltage
Reverse Current
V
I =2.0A
V
F
F
I
R
V
R
: At each V
RM
µA
Note : Mounted torque : 0.49N·m max.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41000 GI IM / 52098 HA (KT) / 4249 MO / 1285 KI, TS No.649-1/3