Ordering number : ENA0699A
DBA500G
SANYO Sem iconductors
DATA S HEET
Diffused Junction Silicon Diode
DBA500G
50A Single-Phase Bridge Rectifier
Features
•
Plastic molded structure
• Peak reverse voltage : V
=600V
RM
• Average output current : I =50A
O
Specifications
Absolute Maximum Ratings at Tc=25°C
Parameter
Peak Reverse Voltage
Symbol
Conditions
Ratings
Unit
V
V
RM
600
50
Average Output Current
Surge Forward Current
Current Squared Time
Junction Temperature
Storage Temperature
Dilective Strength Voltage
Tightening Torque
I
50Hz sine 1cycle peak value, Tc=95°C, with heatsink
50Hz sine wave, non-repetitive, 1cycle peak value, Tj=25°C
1ms≤t<10ms, Tj=25°C, Rating of per diode
A
O
I
500
800
150
A
FSM
I2t
A2s
°C
°C
kV
N•m
Tj
Tstg
--40 to +150
2
Vdis
TOR
Terminals tc case, AC 1 minute
( ): recommended value
0.8(0.6)
Electrical Characteristics at Tc=25°C Per Constituent element of bridge.
Ratings
typ
Parameter
Forward Voltage
Symbol
Conditions
Unit
min
max
1.05
10
V
F
I =25A
V
F
Reverse Current
Thremal Resistance
Marking: BA500G
I
R
V =600V
R
μA
Rth(j-c)
With heatsink (Junction-Case)
0.5
°C / W
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
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70710 TK IM / 62007RB TI IM TC-00000624 No. A0699-1/3