5秒后页面跳转
DB155S PDF预览

DB155S

更新时间: 2024-01-25 23:15:37
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 二极管光电二极管
页数 文件大小 规格书
2页 74K
描述
SILICON BRIDGE RECTIFIERS

DB155S 技术参数

生命周期:Active包装说明:R-PDSO-G4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.6其他特性:UL LISTED
最小击穿电压:600 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PDSO-G4最大非重复峰值正向电流:60 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:600 V
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

DB155S 数据手册

 浏览型号DB155S的Datasheet PDF文件第2页 
GALAXY ELECTRICAL  
DB151S---DB157S  
BL  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 1.5 A  
SILICON BRIDGE RECTIFIERS  
FEATURES  
Rating to 1000V PRV  
DB-S  
Surge overload rating to 30 Amperes peak  
Glass passivated chip junctions  
1± 0.1  
7.9± 0.2  
6.4± 0.1  
Reliable low cost construction utilizing molded  
plastic technique results in inexpensive product  
1.2± 0.3  
10± 0.6  
Lead solderable per MIL-STD-202 method 208  
Lead: silver plated copper, solderde plated  
8.3± 0.1  
5± 0.2  
Plastic material has UL flammabilityclassification  
94V-O  
Polaritysymbols molded on body  
Weight: 0.016 ounces,0.45 grams  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
DB  
DB  
DB  
DB  
DB  
DB  
DB  
UNITS  
151S 152S  
153S 154S 155S 156S 157S  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
Maximum average f orw ard  
100  
1000  
1.5  
A
IF(AV)  
Output current  
@TA=25  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
superimposed on rated load  
IFSM  
40  
A
V
Maximum instantaneous f orw ard voltage  
at 1.5 A  
1.1  
VF  
IR  
Maximum reverse current  
@TA=25  
10.0  
1.0  
μ
A
at rated DC blocking voltage @TA=100  
Operating junction temperature range  
Storage temperature range  
m A  
- 55 ---- + 150  
TJ  
TSTG  
- 55 ---- + 150  
www.galaxycn.com  
BLGALAXY ELECTRICAL  
1.  
Document Number 0287004  

与DB155S相关器件

型号 品牌 描述 获取价格 数据表
DB155S-C RECTRON Bridge Rectifier Diode, 1 Phase, 1.5A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-S

获取价格

DB155S-T RECTRON Bridge Rectifier Diode, 1 Phase, 1.5A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-S

获取价格

DB155S-W RECTRON Bridge Rectifier Diode,

获取价格

DB156 DACHANG Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000V Forward Current 1.5 A

获取价格

DB156 LRC High Current Glass Passivated Molding Single-Phase Bridge Rectifier

获取价格

DB156 LGE Silicon Bridge Rectifiers

获取价格