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DB155S

更新时间: 2024-02-06 09:23:33
品牌 Logo 应用领域
DCCOM 二极管光电二极管
页数 文件大小 规格书
2页 397K
描述
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SURFACE MOUNT BRIDGE RECTIFIER

DB155S 技术参数

生命周期:Active包装说明:R-PDSO-G4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.6其他特性:UL LISTED
最小击穿电压:600 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PDSO-G4最大非重复峰值正向电流:60 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:600 V
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

DB155S 数据手册

 浏览型号DB155S的Datasheet PDF文件第2页 
DB151S  
THRU  
DC COMPONENTS CO., LTD.  
RECTIFIER SPECIALISTS  
R
DB157S  
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SURFACE MOUNT BRIDGE RECTIFIER  
VOLTAGE RANGE - 50 to 1000 Volts  
CURRENT - 1.5 Ampere  
FEATURES  
* Surge overload rating - 50 Amperes peak  
* Ideal for printed circuit board  
* Reliable low cost construction  
* Glass passivated junction  
DB-1S  
MECHANICAL DATA  
* Case: Molded plastic  
* Epoxy: UL 94V-0 rate flame retardant  
* Terminals: MIL-STD-202E, Method 208 guaranteed  
* Polarity: Symbols molded or marked on body  
* Mounting position: Any  
* Weight: 0.38 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
SYMBOL  
DB151S DB152S DB153S DB154S DB155S DB156S DB157S  
UNITS  
Volts  
V
RRM  
RMS  
100  
70  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Bridge Input Voltage  
Maximum DC Blocking Voltage  
50  
35  
50  
200  
140  
200  
400  
280  
400  
1.0  
V
Volts  
V
DC  
Volts  
100  
1000  
I
O
Maximum Average Forward Output Current at T  
A
=
40oC  
Amps  
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
Maximum Forward Voltage Drop per Bridge  
Element at 1.0A DC  
I
FSM  
50  
V
F
1.1  
10  
Volts  
@T  
A
A
= 25oC  
= 125oC  
Maximum DC Reverse Current at rated  
I
R
uAmps  
DC Blocking Voltage per element  
@T  
500  
10  
I2t Rating for Fusing (t<8.3ms)  
I2t  
A2Sec  
pF  
0C/W  
Typical Junction Capacitance ( Note1)  
Typical Thermal Resistance (Note 2)  
C
J
25  
40  
RθJ A  
T
J,  
T
STG  
-55 to + 150  
0 C  
Operating and Storage Temperature Range  
NOTES : 1.Measured at 1 MHZ and applied reverse voltage of 4.0 volts  
2. Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13x13mm) copper pads.  
364  
EXIT  
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