DB106S-G

更新时间： 2024-01-02 12:59:29

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描述
SMD Glass Passivated Bridge Rectifiers

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技术参数
数据手册

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DB106S-G 技术参数

生命周期：	Obsolete	包装说明：	R-PDIP-W4
针数：	4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.57
配置：	BRIDGE, 4 ELEMENTS	二极管元件材料：	SILICON
二极管类型：	BRIDGE RECTIFIER DIODE	JESD-30 代码：	R-PDIP-W4
元件数量：	4	相数：	1
端子数量：	4	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	WIRE	端子位置：	DUAL
Base Number Matches：	1

DB106S-G 数据手册

SMD Glass Passivated Bridge Rectifiers

DB101S-G Thru. DB107S-G

Reverse Voltage: 50 to 1000V

Forward Current: 1.0A

RoHS Device

Features

DBS

-Rating to 1000V PRV

-Ideal for printed circuit board

0.205(5.2)

0.197(5.0)

-Low forward voltage drop,high current capability

0.335(8.50)

0.307(7.80)

-Reliable low cost construction utilizing molded plastic

technique results in inexpensive product

-Lead tin Pb/Sn copper

0.256(6.5)

0.244(6.2)

0.406(10.3)

0.394(10.0)

0.047(1.20)

0.037(0.95)

-The plastic material has UL flammability

classification 94V-0

0.014(0.35)

0.008(0.20)

0.346(8.8)

0.323(8.2)

Mechanical Data

-Polarit:As marked on Body

0.134(3.40)

0.124(3.15)

0.063(1.6)

0.055(1.4)

-Weight: 0.51 grams

Dimensions in inches and (millimeter)

-Mounting position:Any

Maximum ratings and electrical characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol

Parameter

Unit

101S-G 102S-G 103S-G 104S-G 105S-G 106S-G 107S-G

RRM

RMS

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum Reverse Peak Repetitive Voltage

Maximum RMS Voltage

100

1000

Maximum DC Blocking Voltage

Maximum Average Forward

I(AV)

1.0

Rectified Current @T =40°C

Peak Forward Surage Current ,

8.3ms Single Half Sine-Wave

Super Imposed On Rated Load

IFSM

I²t Rating For Fusing (t＜8.3ms)

I ²t

10.4

1.1

A²s

Maximum Forward Voltage At 1.0A DC

Maximum Reverse Current

At rRated DC Blocking Voltage

@TJ=25°C

500

μA

@T =125°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Operating Temperature Range

Storage Temperature Range

°C/W

°C

θJA

-55 ~ +150

TSTG

°C

Notes:

1. Measured at 1.0MHz and applied reverse voltage of 4.0V.

2. Unit mounted on P.C.B with 0.51"×0.51" (13×13mm) copper pads.

REV:B

Page 1

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Comchip Technology CO., LTD.

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