DB103-G

更新时间： 2024-02-12 22:59:00

品牌	Logo	应用领域
上华 - COMCHIP		整流二极管桥式整流二极管光电二极管
页数	文件大小	规格书
3页	65K
描述
Glass Passivated Bridge Rectifiers

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技术参数
数据手册

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DB103-G 技术参数

生命周期：	Obsolete	包装说明：	R-PDIP-W4
针数：	4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.58	配置：	BRIDGE, 4 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	BRIDGE RECTIFIER DIODE
JESD-30 代码：	R-PDIP-W4	最大非重复峰值正向电流：	30 A
元件数量：	4	相数：	1
端子数量：	4	最大输出电流：	1 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	WIRE
端子位置：	DUAL	Base Number Matches：	1

DB103-G 数据手册

Glass Passivated Bridge Rectifiers

DB101-G Thru. DB107-G

Reverse Voltage: 50 to 1000V

Forward Current: 1.0A

RoHS Device

Features

-Rating to 1000V PRV

0.335(8.50)

0.307(7.80)

-Ideal for printed circuit board

-Low forward voltage drop

-High current capability

0.256(6.50)

0.244(6.20)

0.350(8.90)

0.300(7.60)

Mechanical Data

0.346(8.80)

0.323(8.20)

-Case: DB, molded plastic

-Epoxy: UL 94-V0 rate flame retardant.

-Polarit: As marked on Body

-Mounting position: Any

0.134(3.40)

0.124(3.15)

0.059(1.50)

0.193(4.90)

0.155(3.90)

0.022(0.55)

0.018(0.45)

0.205(5.20)

0.197(5.00)

-Weight: 0.53 grams

Dimensions in inches and (millimeter)

Maximum ratings and electrical characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol

DB101-G DB102-G DB103-G DB104-G DB105-G DB106-G DB107-G

Parameter

Unit

Maximum Reverse Peak Repetitive Voltage

Maximum RMS Voltage

RRM

RMS

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward

(AV)

1.0

Rectified Current @T =40°C

Peak Forward Surage Current , 8.3ms Single

Half Sine-Wave Super Imposed On

Rated Load (JEDEC Method)

IFSM

I²t Rating For Fusing (t＜8.3ms)

I ²t

10.4

1.1

A²s

Maximum Forward Voltage At 1.0A DC

@TJ=25°C

Maximum DC Reverse Current

At Rated DC Blocking Voltage @T

500

μA

=125°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Operating Temperature Range

Storage Temperature Range

°C/W

°C

θJA

-55 ~ +150

TSTG

°C

Notes:

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Thermal resistance from junction to ambient mounted on P.C.B with 0.5"×0.5" (13×13mm) copper pads.

REV:A

Page 1

QW-BBR69

Comchip Technology CO., LTD.

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