5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| D405CH02DW0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),1.79KA I(T),TO-200V |
|
| D405CH02DWO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2139.91A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element |
|
| D405CH02DY0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),2.24KA I(T),TO-200A |
|
| D405CH02DYO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2139.91A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element |
|
| D405CH02E2H0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1790000mA I(T), 200V V(DRM) |
|
| D405CH02E2HO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2139.91A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element |
|
| D405CH02E2K0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),1.79KA I(T),TO-200V |
|
| D405CH02E2KO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2139.91 A, 200 V, SCR |
|
| D405CH02EFO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2139.91 A, 200 V, SCR |
|
| D405CH02EWO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 2139.91A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element |
|
塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
英特尔震撼发布：128核心256线程的至强6性能核处理器
SK海力士量产12层HBM3E，容量高达36GB
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
