Datasheet > D1331SH45T

D1331SH45T

更新时间： 2024-09-26 11:15:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	343K
描述
D1331SH IGCT-Diode 盘具有高可靠性、坚固且密封的陶瓷外壳，外壳直径 120mm，高度 26mm。

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中文翻译

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数据手册

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D1331SH45T 数据手册

Technische Information /

technical information

Schnelle beschaltungslose Diode

Fast Hard Drive Diode

D1331SH

Key Parameters

enndaten

V_RRM

4500 V

I_FAVM

1310 A (T_C=85 °C)

28000 A

I_FSM

V_T0

2,13 V

r_T

0,948 mΩ

7,5 K/kW

36 … 52 kN

121 mm

R_thJC

Clamping Force

Max. Diameter

Contact Diameter

Height

86 mm

26 mm

For type designation please refer to actual

short form catalog

http://www.ifbip.com/catalog

Merkmale

Features



Volle Sperrfähigkeit 50/60Hz über einen weiten

Temperaturbereich



Full blocking capability 50/60Hz over a wide

temperature range



Hohe DC Sperrstabilität

Hohe Stoßstrombelastbarkeit

Hoher Gehäusebruchstrom



High DC blocking stability

High surge current capability

High case non-rupture current

Sanftes Ausschaltverhalten bei hohen

Stromsteilheiten

Soft turn-off behavior at high turn-off di/dt

Typische Anwendungen

Typical Applications



Mittelspannungsumrichter



Medium voltage converters

Freilaufdiode für IGCT - Applikationen

Freilaufdiode für IGBT - Applikationen

Pulsed Power - Applikationen

Freewheeling Diode for IGCT - applications

Freewheeling Diode for IGBT - applications

Pulsed power applications

content of customer DMX code

DMX code

digit

DMX code

digit quantity

serial number

1..7

8..16

SP material number

datecode (production day)

datecode (production year)

datecode (production month)

vT class (optional)

17..18

19..20

21..22

23..26

27..30

QR class (optional)

www.ifbip.com

support@infineon-bip.com

Date of Publication: 2015-04-01

Revision: 10.2

Seite/page 1/11

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