TetraFET
D1203UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
A
B
C
1
2
3
30W – 12.5V – 175MHz
SINGLE ENDED
D
E
4
M
F
G
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
H
I
J
K
DM
• LOW C
rss
PIN 1
PIN 3
SOURCE
SOURCE
PIN 2
PIN 4
DRAIN
GATE
• LOW NOISE
DIM
A
B
mm
24.76
18.42
45°
Tol.
0.13
0.13
5°
Inches
Tol.
0.005
0.005
5°
• HIGH GAIN – 10 dB MINIMUM
0.975
0.725
45°
C
D
6.35
0.13
0.25
0.005
E
F
G
H
I
J
K
M
3.17 Dia
5.71
12.7 Dia
6.60
0.13
4.32
0.13 0.125 Dia 0.005
0.13 0.225 0.005
0.13 0.500 Dia 0.005
APPLICATIONS
REF
0.02
0.13
0.13
0.25
0.260
0.005
0.170
0.125
1.03
REF
0.001
0.005
0.005
0.010
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200MHz
3.17
26.16
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
P
Power Dissipation
117W
40V
D
BV
BV
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
DSS
GSS
±20V
I
30A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 3169
Issue 3
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk