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CYW181-02SX PDF预览

CYW181-02SX

更新时间: 2024-02-19 01:02:16
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 晶体时钟发生器微控制器和处理器外围集成电路光电二极管
页数 文件大小 规格书
9页 190K
描述
Peak-Reducing EMI Solution

CYW181-02SX 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.150 INCH, LEAD FREE, MS-012, SOIC-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.84
Is Samacsys:N其他特性:ALSO OPERATES AT 5V SUPPLY
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.889 mm湿度敏感等级:1
端子数量:8最高工作温度:70 °C
最低工作温度:最大输出时钟频率:48 MHz
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260主时钟/晶体标称频率:48 MHz
认证状态:Not Qualified座面最大高度:1.727 mm
最大供电电压:3.465 V最小供电电压:3.135 V
标称供电电压:3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:3.8985 mm
uPs/uCs/外围集成电路类型:CLOCK GENERATOR, OTHERBase Number Matches:1

CYW181-02SX 数据手册

 浏览型号CYW181-02SX的Datasheet PDF文件第2页浏览型号CYW181-02SX的Datasheet PDF文件第3页浏览型号CYW181-02SX的Datasheet PDF文件第4页浏览型号CYW181-02SX的Datasheet PDF文件第6页浏览型号CYW181-02SX的Datasheet PDF文件第7页浏览型号CYW181-02SX的Datasheet PDF文件第8页 
W181  
.
Absolute Maximum Conditions[2]  
Parameter  
DD, VIN  
TSTG  
TA  
Description  
Voltage on any pin with respect to GND  
Storage Temperature  
Operating Temperature  
Ambient Temperature under Bias  
Power Dissipation  
Rating  
–0.5 to +7.0  
–65 to +150  
0 to +70  
–55 to +125  
0.5  
Unit  
V
°C  
°C  
°C  
W
V
TB  
PD  
DC Electrical Characteristics: 0°C < TA < 70°C, VDD = 3.3V ±5%  
Parameter  
IDD  
tON  
Description  
Supply Current  
Power-Up Time  
Test Condition  
Min.  
Typ.  
18  
Max.  
32  
5
Unit  
mA  
ms  
First locked clock cycle after Power  
Good  
VIL  
VIH  
VOL  
VOH  
IIL  
Input Low Voltage  
2.4  
2.4  
0.8  
0.4  
–100  
10  
7
10  
V
V
V
Input High Voltage  
Output Low Voltage  
Output High Voltage  
Input Low Current  
Input High Current  
Output Low Current  
Output High Current  
Input Capacitance  
Input Capacitance  
Input Pull-Up Resistor[3]  
Clock Output Impedance  
V
Note 3  
Note 3  
@ 0.4V, VDD = 3.3V  
@ 2.4V, VDD = 3.3V  
All pins except CLKIN  
CLKIN pin only  
µA  
µA  
mA  
mA  
pF  
pF  
kΩ  
IIH  
IOL  
IOH  
CI  
CI  
RP  
15  
15  
v
6
500  
25  
ZOUT  
DC Electrical Characteristics: 0°C < TA < 70°C, VDD = 5V ±10%  
Parameter  
IDD  
tON  
Description  
Supply Current  
Power-Up Time  
Test Condition  
Min.  
Typ.  
30  
Max.  
50  
5
Unit  
mA  
ms  
First locked clock cycle after  
Power Good  
VIL  
VIH  
VOL  
VOH  
IIL  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
Output High Voltage  
Input Low Current  
Input High Current  
Output Low Current  
Output High Current  
Input Capacitance  
Input Capacitance  
Input Pull-Up Resistor  
0.15VDD  
0.4  
V
V
V
0.7VDD  
2.4  
V
Note 3  
Note 3  
@ 0.4V, VDD = 5V  
@ 2.4V, VDD = 5V  
All pins except CLKIN  
CLKIN pin only  
–100  
10  
µA  
µA  
mA  
mA  
pF  
pF  
kΩ  
IIH  
IOL  
IOH  
CI  
CI  
RP  
24  
24  
7
10  
6
500  
Notes:  
1. Stresses greater than those listed in this table may cause permanent damage to the device. These represent a stress rating only. Operation of the device at  
these or any other conditions above those specified in the operating sections of this specification is not implied. Maximum conditions for extended periods may  
affect reliability  
2. Single Power Supply: The voltage on any input or I/O pin cannot exceed the power pin during power-up.  
3. Inputs FS1:2 have a pull-up resistor; Input SSON# has a pull-down resistor.  
Document #: 38-07152 Rev. *D  
Page 5 of 9  

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