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CYRS1544AV18-250GCMB PDF预览

CYRS1544AV18-250GCMB

更新时间: 2023-12-06 20:12:49
品牌 Logo 应用领域
英飞凌 - INFINEON 静态存储器
页数 文件大小 规格书
36页 760K
描述
Synchronous SRAM

CYRS1544AV18-250GCMB 数据手册

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CYRS1542AV18  
CYRS1544AV18  
72-Mbit QDR® II+ SRAM  
Two-Word Burst Architecture  
with RadStop™ Technology  
72-Mbit QDR® II+ SRAM Two-Word Burst Architecture with RadStop™ Technology  
JTAG 1149.1 compatible test access port  
DLL for accurate data placement  
Radiation Performance  
Radiation Data  
Configurations  
Total Dose =300 Krad  
Soft error rate (both Heavy Ion and proton)  
Heavy ions 1 × 10-10 upsets/bit-day with an external SECDED  
EDAC Controller  
CYRS1542AV18 – 4M × 18  
CYRS1544AV18 – 2M × 36  
Neutrons = 2.0 × 1014 N/cm2  
Functional Description  
Dose rate = 2.0 × 109 rad(Si)/sec  
The CYRS1542AV18 and CYRS1544AV18 are synchronous  
pipelined SRAMs, equipped with 1.8-V QDR II+ architecture with  
RadStop™ technology. Cypress’s state-of-the-art RadStop  
Technology is radiation hardened through proprietary design and  
process hardening techniques.  
Dose rate survivability (rad(Si)/sec) = 1.5 × 10^11 rad(Si)/sec  
Latch up immunity = 120 MeV.cm2/mg (125 °C)  
Prototyping Options  
The QDR II+ architecture consists of two separate ports to  
access the memory: the read port and the write port. The read  
port has dedicated data output bus to support read operations  
and the write port has dedicated data input bus to support write  
operations. QDR II+ architecture completely eliminates the need  
to “turnaround” the data bus that exists with common I/O devices.  
Each port is accessed through a common address bus.  
Addresses for read are latched on the rising edges of the input  
(K) clock whereas addresses for write are latched on the falling  
edges of the input (K) clock. Accesses to the QDR II+ read and  
write ports are completely independent of each another. To  
maximize data throughput, both read and write ports are  
equipped with DDR interfaces. Each address location is  
associated with two 18-bit words for CYRS1542AV18, or two  
36-bit words for CYRS1544AV18 that burst sequentially into or  
out of the device. Since data can be transferred on every rising  
edge of both input clocks (K and K#), memory bandwidth is  
maximized while simplifying system design by eliminating bus  
“turnarounds”.  
Non qualified CYPT1542AV18 and CTPT1544AV18 devices  
with same functional and timing characteristics in a 165-ball  
Ceramic Column Grid Array (CCGA) package and Land Grid  
Array (LGA) package without solder columns attached.  
Features  
Separate independent read and write data ports  
Supports concurrent transactions  
250-MHz clock for high bandwidth  
Two-word burst on all accesses  
Double data rate (DDR) interfaces on both read and write ports  
at 250 MHz (data transferred at 500 MHz)  
Two input clocks (K and K) for precise DDR timing  
SRAM uses rising edges only  
Echo clocks (CQ and CQ) simplify data capture in high speed  
systems  
Depth expansion is accomplished with port selects, which  
enables each port to operate independently.  
Single multiplexed address input bus latches address inputs  
for both read and write ports  
All synchronous inputs pass through input registers controlled by  
the K or K input clocks. All data outputs pass through output  
registers controlled by the K or K input clocks as well. Reads and  
writes are conducted with on-chip synchronous self-timed  
circuitry.  
Separate port selects for depth expansion  
Synchronous internally self-timed writes  
For a complete list of related resources, click here.  
QDR® II operates with 2.0 cycle read latency when delay lock  
loop (DLL) is enabled  
Available in × 18 and × 36 configurations  
Selection Guide  
Full data coherency, providing most current data  
Core VDD = 1.8 V (±0.1 V); I/O VDDQ = 1.4 V to VDD  
Available in 165-ball CCGA (21 × 25 ×2.83 mm)  
HSTL inputs and variable drive HSTL output buffers  
Description  
250 MHz Unit  
Maximum operating frequency  
250  
1700  
1700  
MHz  
mA  
Maximum operating current  
(concurrent R/W)  
× 18  
× 36  
Cypress Semiconductor Corporation  
Document Number: 001-60006 Rev. *O  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised May 27, 2019  

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