Datasheet > CY7C1041B-17VC

CY7C1041B-17VC

更新时间： 2024-01-11 10:24:16

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		内存集成电路静态存储器光电二极管
页数	文件大小	规格书
10页	344K
描述
256K x 16 Static RAM

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数据手册

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CY7C1041B-17VC 数据手册

CY7C1041B

Data Retention Waveform

DATA RETENTION MODE

> 2V

3.0V

CDR

1041B–5

Switching Waveforms

[12, 13]

Read Cycle No. 1

ADDRESS

OHA

DATA OUT

PREVIOUS DATA VALID

DATA VALID

1041B-6

Read Cycle No. 2 (OEControlled) ^{[13, 14]}

ADDRESS

ACE

HZOE

DOE

BHE, BLE

LZOE

HZCE

DBE

LZBE

HZBE

HIGH

IMPEDANCE

HIGH IMPEDANCE

DATA OUT

DATA VALID

LZCE

ICC

50%

SUPPLY

CURRENT

ISB

1041B-7

Notes:

12. Device is continuously selected. OE, CE, BHE, and/or BHE = V_IL.

13. WE is HIGH for read cycle.

14. Address valid prior to or coincident with CE transition LOW.

1...3 4 567 8 9 10

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与CY7C1041B-17VC相关器件

型号	品牌	描述	获取价格	数据表
CY7C1041B-17VCT	ROCHESTER	Standard SRAM, 256KX16, 17ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44	获取价格
CY7C1041B-17VI	CYPRESS	256K x 16 Static RAM	获取价格
CY7C1041B-17VIT	ROCHESTER	Standard SRAM, 256KX16, 17ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44	获取价格
CY7C1041B-17ZC	CYPRESS	256K x 16 Static RAM	获取价格
CY7C1041B-17ZC	ROCHESTER	暂无描述	获取价格
CY7C1041B-17ZI	CYPRESS	256K x 16 Static RAM	获取价格