25/0251
CY7C09159AV
CY7C09169AV
3.3V 8K/16K x 9
Synchronous Dual Port Static RAM
• High-speed clock to data access 9 and 12 ns (max.)
• 3.3V Low operating power
Features
• True Dual-Ported memory cells which allow simulta-
neous access of the same memory location
—Active = 135 mA (typical)
—Standby = 10 µA (typical)
• Two Flow-Through/Pipelined devices
— 8K x 9 organization (CY7C09159AV)
— 16K x 9 organization (CY7C09169AV)
• Three Modes
• Fully synchronous interface for easier operation
• Burst counters increment addresses internally
—Shorten cycle times
—Minimize bus noise
— Flow-Through
—Supported in Flow-Through and Pipelined modes
• Dual Chip Enables for easy depth expansion
• Automatic power-down
— Pipelined
— Burst
• Pipelinedoutputmodeonbothportsallowsfast83-MHz
operation
• Commercial and industrial temperature ranges
• Available in 100-pin TQFP
• 0.35-micron CMOS for optimum speed/power
v
Logic Block Diagram
R/WL
OEL
R/WR
OER
CE0L
CE1L
CE0R
CE1R
1
1
0
0
0/1
0/1
1
0
0
1
0/1
0/1
FT/PipeL
FT/PipeR
9
9
I/O0L−I/O8L
I/O0R−I/O8R
I/O
I/O
Control
Control
13/14
13/14
[1]
[1]
A0−A12/13L
A0−A12/13R
Counter/
Address
Register
Decode
Counter/
Address
Register
Decode
CLKL
CLKR
ADSR
True Dual-Ported
RAM Array
ADSL
CNTENL
CNTRSTL
CNTENR
CNTRSTR
Notes:
1. A0−A12 for 8K; A0−A13 for 16K.
For the most recent information, visit the Cypress web site at www.cypress.com
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
Document #: 38-06053 Rev. **
Revised September 21, 2001