Datasheet > CY14B104K_1106

CY14B104K_1106

更新时间： 2024-02-07 17:57:42

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器时钟
页数	文件大小	规格书
35页	1030K
描述
4-Mbit (512 K x 8/256 K x 16) nvSRAM with Real Time Clock 25 ns and 45 ns access times

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中文翻译

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数据手册

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CY14B104K_1106 数据手册

CY14B104K, CY14B104M

4-Mbit (512 K × 8/256 K × 16) nvSRAM

with Real Time Clock

4-Mbit (512

K × 8/256 K × 16) nvSRAM with Real Time Clock

■ Watchdog timer

Features

■ Clock alarm with programmable interrupts

■ Capacitor or battery backup for RTC

■ 25 ns and 45 ns access times

■ Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16

(CY14B104M)

■ Industrial temperature

■ Hands off automatic STORE on power-down with only a small

capacitor

■ 44-pin and 54-pin thin small outline package (TSOP) Type II

■ Pb-free and restriction of hazardous substances (RoHS)

compliant

■ STORE to QuantumTrap non-volatile elements is initiated by

software, device pin, or AutoStore on power-down

Functional Description

■ RECALL to SRAM is initiated by software or power-up

■ High reliability

The Cypress CY14B104K and CY14B104M combines a 4-Mbit

non-volatile static RAM (nvSRAM) with a full-featured RTC in a

monolithic integrated circuit. The embedded non-volatile

elements incorporate QuantumTrap technology producing the

world’s most reliable non-volatile memory. The SRAM is read

and written infinite number of times, while independent

non-volatile data resides in the non-volatile elements.

■ Infinite read, write, and RECALL cycles

■ 1 million STORE cycles to QuantumTrap

■ 20 year data retention

■ Single 3 V +20%, –10% operation

The RTC function provides an accurate clock with leap year

tracking and a programmable, high accuracy oscillator. The

alarm function is programmable for periodic minutes, hours,

days, or months alarms. There is also a programmable watchdog

timer for process control.

■ Data integrity of Cypress nvSRAM combined with full-featured

real time clock (RTC)

Logic Block Diagram ^{[1, 2, 3]}

V_CC

V_CA

Quatrum

Trap

2048 X 2048

V_RTCbat

A₀

A₁

A₂

POWER

CONTROL

STORE

V_RTCcap

RECALL

A₃

A₄

A₅

A₆

A₇

A₈

A₁₇

STORE/RECALL

HSB

CONTROL

STATIC RAM

ARRAY

2048 X 2048

SOFTWARE

A₁₄- A₂

DETECT

A₁₈

DQ₀

DQ₁

DQ₂

X_out

X_in

DQ₃

DQ₄

RTC

MUX

INT

DQ₅

DQ₆

DQ₇

COLUMN I/O

A₁₈- A₀

DQ₈

DQ₉

DQ₁₀

COLUMN DEC

DQ₁₁

DQ₁₂

DQ₁₃

DQ₁₄

BLE

A₉A₁₀

₁₁A₁₂A₁₃A₁₄A₁₅A₁₆

DQ₁₅

BHE

Notes

1. Address A –A for × 8 configuration and Address A –A for × 16 configuration.

2. Data DQ –DQ for × 8 configuration and Data DQ –DQ for × 16 configuration.

3. BHE and BLE are applicable for × 16 configuration only.

Cypress Semiconductor Corporation

Document #: 001-07103 Rev. *U

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised July 12, 2011

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与CY14B104K_1106相关器件

型号	品牌	获取价格	描述	数据表
CY14B104K_12	CYPRESS	获取价格	4-Mbit (512 K Ã 8/256 K Ã 16) nvSRAM with R
CY14B104KA	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
CY14B104KA-ZS20XCT	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
CY14B104KA-ZS20XI	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
CY14B104KA-ZS20XIT	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
CY14B104KA-ZS25XCT	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
CY14B104KA-ZS25XI	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
CY14B104KA-ZS25XIT	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
CY14B104KA-ZS45XCT	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
CY14B104KA-ZS45XI	CYPRESS	获取价格	4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock

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