Datasheet > CTL0412ND

CTL0412ND

更新时间： 2022-02-26 14:47:49

品牌	Logo	应用领域
CTMICRO		/
页数	文件大小	规格书
11页	1054K
描述
N-Channel Enhancement MOSFET

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CTL0412ND 数据手册

CTL0412ND

N-Channel Enhancement MOSFET

Features

Description

The CTL0412ND uses high performance Trench

Technology to provide excellent R_DS(ON)and low gate

charge which is suitable for most of the synchronous

buck converter applications tions.

Drain-Source Breakdown Voltage V_DSS20 V



Drain-Source On-Resistance

R_DS(ON)22m, at V_GS= 4.5V, I_D= 4.1A

R_DS(ON)27m, at V_GS= 2.5V, I_D= 3.8A



Continuous Drain Current at T_C=25

℃I_D= 4.1A

Advanced high cell density Trench Technology

RoHS Compliance & Halogen Free

Applications



Power Management



Lithium Ion Battery

Package Outline

Schematic

Pin 2

Gate 1

Drain 1

Source 1

Source 2

Gate 2

Pin 1

Drain 2

CT Micro

Rev 1

Proprietary & Confidential

Page 1

Aug, 2013

12 3 4 5 6 7...11

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