生命周期: | Obsolete | 零件包装代码: | TO-3PL |
包装说明: | TO-3PL, 3 PIN | 针数: | 2 |
Reach Compliance Code: | compliant | 风险等级: | 5.83 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 60 A | 集电极-发射极最大电压: | 900 V |
配置: | SINGLE WITH BUILT-IN DIODE | 门极发射器阈值电压最大值: | 6 V |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 200 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 550 ns | 标称接通时间 (ton): | 170 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CT60AM-18C-AD | RENESAS |
获取价格 |
Insulated Gate Bipolar Transistor | |
CT60AM18F | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 900V V(BR)CES | 60A I(C) | TO-247VAR | |
CT60AM-18F | RENESAS |
获取价格 |
Insulated Gate Bipolar Transistor | |
CT60AM-18F | POWEREX |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
CT60AM-18F-AD | RENESAS |
获取价格 |
Insulated Gate Bipolar Transistor | |
CT60AM20 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 60A I(C) | TO-247VAR | |
CT60AM-20 | MITSUBISHI |
获取价格 |
Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-3PL, 3 PIN | |
CT60E | ETC |
获取价格 |
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|70V V(BO) MAX|50UA I(S)|DO-204AL | |
CT60F-331K-H | Central Technologies |
获取价格 |
General Purpose Inductor, 330uH, 10%, 1 Element, Iron-ferrite-Core, RADIAL LEADED, ROHS CO | |
CT60F-331K-K | Central Technologies |
获取价格 |
High Current Power Toroids |