Datasheet > CSP10S60S-A

CSP10S60S-A

更新时间： 2024-09-22 01:24:23

品牌	Logo	应用领域
竹懋 - CITC		/
页数	文件大小	规格书
3页	480K
描述
Super Low Barrier High Voltage Power Rectifier

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中文翻译

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数据手册

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CSP10S60S-A 数据手册

CSP10S60S-A

Super Low Barrier High Voltage Power Rectifier

Chip Integration Technology Corporation

Main Product Characteristics

■ Outline

10A

I_F(AV)

V_RRM

T_J

60V

150^OC

TO-277

0.264 (6.70)

0.248 (6.30)

PIN 1

PIN 3

PIN 2

0.45V

V_(Typ)

0.077 (1.96)

0.069 (1.76)

0.073 (1.85)

0.069 (1.75)

■ Features

• Low forward voltage drop.

• Excellent high temperature stability.

• Fast switching capability.

0.028 (0.71)

0.016 (0.41)

0.216 (5.48)

0.208 (5.28)

0.028 (0.71)

0.016 (0.41)

• Suffix "G" indicates Halogen-free part, ex.CSP10S60SG-A.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

0.037 (0.95)

0.033 (0.85)

0.124 (3.15)

0.112 (2.85)

0.037 (0.95)

0.033 (0.85)

■ Mechanical data

• Epoxy : UL94-V0 rated flame retardant.

• Case : Molded plastic, TO-277.

• Lead : Solder plated, solderable per MIL-STD-750,

Method 2026.

0.145 (3.69)

0.133 (3.39)

0.069 (1.74)

0.057 (1.44)

0.014 (0.35)

0.010 (0.25)

0.049 (1.25)

0.037 (0.95)

• Polarity: Indicated by cathode band.

• Mounting Position : Any.

Dimensions in inches and (millimeters)

• Weight : Approximated 0.093 grams.

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Marking code

Conditions

Symbol

CSP10S60S-A

CSP10S60S

UNIT

Peak repetitive reverse voltage

Working peak reverse voltage

DC blocking voltage

V_RRM

V_RWM

V_RM

I_O

Forward rectified current

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current

I_FSM

280

I_RRM

R_θJC

Peak repetitive reverse surge current

Thermal resistance(1)

2us - 1kHz

^OC/W

^OC

Junction to case

Operating and Storage temperature

T_J, T_STG

-55 ~ +150

Parameter

Conditions

I_F= 10A, T_J= 25^OC

I_F= 10A, T_J= 125^OC

V_R= V_RRMT_J= 25^OC

V_R= V_RRMT_J= 125^OC

Symbol

V_F

MIN.

TYP.

450

MAX.

UNIT

Forward voltage drop

510

490

0.5

Reverse current

I_R

100

Note : 1.FR-4 PCB, 2oz.Copper.

2.Polymide PCB, 2oz.Copper.Cathode pad dimensions 18.8mm x 14.4mm.Anode pad dimensions 5.6mm x 14.4mm.

Document ID : DS-12KCQ

Revised Date : 2015/08/11

Revision : C4

12 3

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