Datasheet > CSF20L80CT-J

CSF20L80CT-J

更新时间： 2025-09-02 18:52:51

品牌	Logo	应用领域
竹懋 - CITC		/
页数	文件大小	规格书
3页	522K
描述
Product Category : MOS Schottky Diodes ;Spec : IF=20.0(A) , VRRM=80(V) , VF=0.65V@10A , IR=0.5mA@80V ;Package : ITO-220AB-J;Packing : 1000pcs/Box;Note : ;

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CSF20L80CT-J 数据手册

CSF20L80CT-J

20A MOS Schottky Rectiﬁer

Chip Integration Technology Corporation

Main Product Characteristics

■Outline

I_F(AV)

V_RWM

T_J

2x10A

80V

150 ^OC

ITO-220AB-J

0.192(4.89)

0.177(4.49)

V_F(Typ)

0.525V

0.132(3.45)

0.410(10.41)

0.390(9.91)

0.124(3.15)

0.113(2.88)

0.090(2.28)

DIA

■Features

0.136( 3.45)

0.120(3.05)

0.270(6.85)

0.254(6.45)

• Low forward voltage drop.

• Excellent high temperature stability.

• Fast switching capability.

0.646(16.40)

0.606(15.40)

45.0°

• Lead free in compliance with EU RoHS.

0.136(3.45)

0.096(2.45)

0.114(2.90)

0.984(2.50)

0.531(13.50)

0.492(12.50)

■ Mechanical data

0.056(1.43)

0.043(1.10)

0.056(1.43)

0.043(1.10)

• Epoxy : UL94V-0 rated ﬂame retardant.

• Case : JEDEC ITO-220AB-J molded plastic body

0.037(0.93)

0.026(0.67)

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026.

• Polarity: As marked.

0.104(2.64)

0.096(2.44)

0.025(0.63)

0.015(0.37)

• Weight : Approximated 1.8 gram

Dimensions in inches and (millimeters)

■ Circuit Diagram

■ Maximum ratings and electrical characteristics

Rating at 25 ^OC ambient temperature unless otherwise speciﬁed.

Parameter

Conditions

Symbol

CSF20L80CT-J

UNIT

Working peak reverse voltage(Note 1)

Forward rectiﬁed current (total device)

V_RWM

I_O

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current

I_FSM

280

Peak repetitive reverse surge current

(per diode)

I_RRM

2us - 1kHz

^OC/W

^OC

R_θJC

R_θJA

T_STG

T_J

Junction to case

Typical Thermal resistance (per diode)

Junction to ambient

Storage temperature

-55 ~ +150

^OC

Operating Junction temperature

Parameter

Conditions

Symbol

V_F

MIN.

TYP.

405

580

525

0.03

MAX.

650

UNIT

I_F= 3A, T

I_F= 10A, T

25°C

Forward voltage drop (per diode)

= 125°C

V_R= 80V, T

= 25°C

= 125°C

0.5

I_R

Reverse current (per diode)

_R= 80V, T

Reverse Breakdown Voltage (per diode)

I_F= 0.5mA, T

= 25°C

V_BR

Note1:

The component can withstand within 1ms with on/oﬀ frequency up on 60KHz,and the time width of each pulse is under 200ns and within 100V peak voltage.

Document ID : DS-11K074

Revised Date : 2021/07/07

Revision : C2

12 3

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