Datasheet > CSDW20H120

CSDW20H120

更新时间： 2024-10-03 14:53:07

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	2388K
描述
TO-247-2L

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中文翻译

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数据手册

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CSDW20H120 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGYCO.,LTD

TO-247-2L Plastic-Encapsulate Diode

CSDW20H120 Silicon Carbide Schottky Diode

TO-247-2L

MAIN CHARACTERISTICS

I_O

20A(T_C≤122℃)

1200V

V_RRM

T_j

175℃

1. CATHODE

2. ANODE

1.48V (@T_j=25℃)

2.35V (@T_j=175℃)

V_F(typ)

FEATURES



Zero Reverse Recovery Current

Zero Forward Recovery Voltage

Temperature-independent performance

High-speed switching

Low switching loss

Low Leakage Current

Application



Industrial Power Supplies

Power factorcorrection

Motor drive traction

EV charging station

Solar Inverters

MARKING

CSDW20H120 = Device code

Solid dot = Green molding compound device

if none, the normal device

CSD

W20H120

XXXX

XXXX = Code

MAXIMUM RATINGS ( T_j=25 unless otherwise noted )

℃

Value

Symbol

Parameter

Peak repetitive reverse voltage

Unit

V_RRM

V_RWM

V_R

Working peak reverse voltage

DC blocking voltage

1200

T_C≤25℃

T_C≤100℃

AverageForwardCurrent

I_F(AV)

T_C≤122℃

Non-Repetitive peak forward surge current (

10ms half sine wave)

I_FSM

∫i²dt

P_D

184

A²s

(t =10ms)

i tvalue

169

136

1.1

Powerdissipation

ThermalResistanceFromJunction to Case

Junction temperature

R_ΘJC

℃/W

℃

-55~175

Storage temperature

T_stg

℃

www.jscj-elec.com

Rev - 1.0

12 3 4 5

中文翻译

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