Datasheet > CSD471AY

CSD471AY

更新时间： 2024-09-23 23:44:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	61K
描述
TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 1A I(C) \| TO-92

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中文翻译

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数据手册

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CSD471AY 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CSD471A

TO-92

BCE

Low Frequency Power Amplifier.

Complementary CSB564A

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )

DESCRIPTION

SYMBOL

BVCBO

BVCEO

BVEBO

VALUE

UNIT

Collector -Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

5.0

1.0

Collector Dissipation

Junction Temperature

Storage Temperature

Tstg

800

150

-55 to +150

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

5.0

TYP

MAX

0.1

400

0.5

1.2

UNIT

Collector -Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Cut off Current

DC Current Gain

BVCBO

BVCEO

BVEBO

ICBO

IC=100uA, IE=0

IC=10mA, IB=0

IE=100uA, IC=0

VCB=30V, IE=0

VCE=1V, IC=100mA

hFE

Collector Emitter Saturation Voltage VCE(Sat) IC=1A, IB=0.1A

Base Emitter Saturation Voltage

Dynamic Characteristics

Transition Frequency

VBE(Sat) IC=1A, IB=0.1A

Cob

VCE=6V, IC=10mA,

VCB=6V, IE=0

f=1MHz

130

MHz

Output Capacitance

hFE* Classification :

O : 70-140;

Y : 120-240;

G : 200-400;

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

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