Datasheet > CSCL2482

CSCL2482

更新时间： 2024-09-25 06:49:31

品牌	Logo	应用领域
RECTRON		晶体晶体管局域网
页数	文件大小	规格书
4页	926K
描述
NPN SILICON PLANAR EPITAXIAL TRANSISTOR

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中文翻译

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数据手册

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CSCL2482 数据手册

CSCL2482

TO-92 Plastic Package

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

High Voltage Switching and Amplifier Applications

CTV Horizontal Driver and Chroma Output Applications

ABSOLUTE MAXIMUM RATINGS (T_a=25ºC unless specified otherwise)

VALUE

300

UNITS

DESCRIPTION

SYMBOL

V_CEO

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Current

V_CBO

V_EBO

I_C

100

I_B

Base Current

P_C

900

Collector Power Dissipation

T_stg

- 55 to +150

150

ºC

Storage Temperature

Junction Temperature

T_j

ABSOLUTE MAXIMUM RATINGS(T_a=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNITS

I_CBO

V_CB=240V, I_E= 0

Collector Cut Off Current

Emitter Cut Off Current

DC Current Gain

1.0

µA

I_EBO

h_FE

V_EB=7V, I_C= 0

V_CE=10V, I_C=4mA

V_CE=10V, I_C=20mA

I_C=10mA, I_B=1mA

V_CE=10V, I_C=20mA

V_CB=20V, I_E=0, f=1MHz

150

1.0

V_{CE (sat)}

V_{BE (sat)}

f_T

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Transition Frequency

MHz

C_Ob

Collector Output Capacitance

3.0

12 3 4

中文翻译

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