Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC2713
PIN CONFIGURATION (NPN)
1 = BASE
SOT-23
2 = EMITTER
Formed SMD Package
3 = COLLECTOR
3
1
2
MARKING
CSC2713 =13
CSC2713G =13G
CSC2713L =13L
Complementary CSA1163
Audio Frequency General Purpose Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
VALUE
120
120
5
DESCRIPTION
SYMBOL
VCBO
UNITS
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
VCEO
V
VEBO
IC
V
100
20
mA
mA
mW
ºC
IB
Base Current
PC
Tj
150
125
Collector Power Dissipation
Junction Temperature
Tstg
- 55 to +125
Storage Temperature Range
ºC
Electrical Characterstics (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
ICBO
CONDITIONS
VCB=120V, IE=0
VEB=5V, IC=0
MIN
TYP
MAX
100
100
700
UNIT
nA
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
IEBO
nA
VCE=6V, IC=2mA
hFE
200
Collector Emitter Saturation
Voltage
VCE (sat)
IC=10mA, IB=1mA
0.3
V
fT
VCE=6V, IC=1mA
Transition Frequency
Output Capacitance
100
4
MHz
pF
Cob
VCB=10V, IE=0, f=1MHz
VCE=6V, IC=0.1mA, f=1KHz,
Noise Figure
NF
10
dB
Rg=10kW
h
FE Classification
G : 200 - 400
L : 350 - 700
CSC2713Rev_1 021203E
Data Sheet
Page 1 of 3
Continental Device India Limited