Datasheet > CS80N08A4

CS80N08A4

更新时间： 2024-10-03 15:19:15

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	636K
描述
TO-252(或DPAK)

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CS80N08A4 数据手册

Silicon N-Channel Power MOSFET

CS80N08 A4

○

General Description：

V_DSS

CS80N08 A4, the silicon N-channel Enhanced

VDMOSFETs, is obtained by advanced Trench Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is TO-252,

which accords with the RoHS standard.

I_D

（

）

Silicon limited current

I_D

（

）

Package limited

P_D(T_C=25℃)

mΩ

R_DS(ON)Typ

6.6

Features：

 Fast Switching



Low ON Resistance(Rdson≤8.5mΩ)

 Low Gate Charge (Typical Data:59.8nC)

 Low Reverse transfer capacitances(Typical:237pF)

 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（T_J= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C _（

I_D

240

±20

460

）

I_DM

Package limited

Gate-to-Source Voltage

V_GS

Single Pulse Avalanche Energy

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

E_AS

P_D

0.666

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2020V01

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