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CS5N60A8H

更新时间: 2024-02-22 12:54:05
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CS5N60A8H 数据手册

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C5N60A8H  
Huajing Discrete Devices  
R
100  
10  
1
FOR TEMPERATURES  
ABOVE 25DERATE PEAK  
CURRENT AS FOLLOWS:  
TRANSCONDUCTANCE MAY LIMIT  
CURRENT IN THIS REGION  
150 TC  
I = I25  
125  
1.00E-05  
1.00E-04  
1.00E-03  
1.00E-02  
t Pulse Width , Seconds  
1.00E-01  
1.00E+00  
1.00E+01  
Figure 6 Maximun Peak Current Capability  
6
9
7.5  
6
PULSE DURATION = 10μs  
DUTY FACTOR = 0.5%MAX  
Tc =25 ℃  
PULSE DURATION = 10μs  
DUTY CYCLE = 0.5%MAX  
VDS=30V  
5
4
3
2
1
0
ID= 5A  
ID= 2.5A  
ID= 1.25A  
4.5  
3
-55℃  
+25℃  
+150℃  
1.5  
0
2
3
4
5
6
4
6
8
10  
12  
14  
Vgs , Gate to Source Voltage , Volts  
Vgs , Gate to Source VoltageVolts  
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage  
Figure 7 Typical Transfer Characteristics  
and Drain Current  
3
2.5  
2
2.5  
PULSE DURATION = 10μs  
DUTY CYCLE= 0.5%MAX  
Tc =25 ℃  
PULSE DURATION = 10μs  
2.25  
DUTY CYCLE= 0.5%MAX  
VGS=10V ID=.2.5A  
2
1.75  
1.5  
1.25  
1
VGS=20V  
1.5  
1
0.75  
0.5  
-50  
0
50  
100  
150  
0
5
10  
15  
20  
Tj, Junction temperature , C  
Id , Drain Current , Amps  
Figure 10 Typical Drian to Source on Resistance  
vs Junction Temperature  
Figure 9 Typical Drain to Source ON Resistance  
vs Drain Current  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2008