Datasheet > CS5N60A8H

CS5N60A8H

更新时间： 2024-02-02 19:48:06

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
10页	345K
描述
无锡华润华晶

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数据手册

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CS5N60A8H 数据手册

C5N60A8H

Huajing Discrete Devices

○

100

FOR TEMPERATURES

ABOVE 25℃ DERATE PEAK

CURRENT AS FOLLOWS:

TRANSCONDUCTANCE MAY LIMIT

CURRENT IN THIS REGION

⎡

⎢

⎣

⎤

⎥

⎦

150 − T_C

I = I₂₅

125

1.00E-05

1.00E-04

1.00E-03

1.00E-02

t ，Pulse Width , Seconds

1.00E-01

1.00E+00

1.00E+01

Figure 6 Maximun Peak Current Capability

7.5

PULSE DURATION = 10μs

DUTY FACTOR = 0.5%MAX

Tc =25 ℃

PULSE DURATION = 10μs

DUTY CYCLE = 0.5%MAX

V_DS=30V

I_D= 5A

I_D= 2.5A

I_D= 1.25A

4.5

-55℃

+25℃

+150℃

1.5

Vgs , Gate to Source Voltage , Volts

Vgs , Gate to Source Voltage，Volts

Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage

Figure 7 Typical Transfer Characteristics

and Drain Current

2.5

PULSE DURATION = 10μs

DUTY CYCLE= 0.5%MAX

Tc =25 ℃

PULSE DURATION = 10μs

2.25

DUTY CYCLE= 0.5%MAX

VGS=10V ID=.2.5A

1.75

1.5

1.25

V_GS=20V

1.5

0.75

0.5

-50

100

150

Tj, Junction temperature , C

Id , Drain Current , Amps

Figure 10 Typical Drian to Source on Resistance

vs Junction Temperature

Figure 9 Typical Drain to Source ON Resistance

vs Drain Current

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2008

1 2 3 456 7 8...10

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