Datasheet > CS540A8

CS540A8

更新时间： 2024-09-27 15:19:23

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华润微 - CRMICRO		/
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10页	1080K
描述
TO-220

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CS540A8 数据手册

Silicon N-Channel Power MOSFET

○

CS540 A8

General Description：

V_DSS

100

CS540 A8, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar

Technology which reduce the conduction loss, improve

switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit

for system miniaturization and higher efficiency. The package

form is TO-220AB, which accords with the RoHS standard.

Features：

I_D

150

P_D(T_C=25℃)

R_DS(ON)Typ

mΩ

l Fast Switching

l Low ON Resistance(Rdson≤44 mΩ)

l Low Gate Charge (Typical Data:37nC)

l Low Reverse transfer capacitances(Typical:10pF)

l 100% Single Pulse avalanche energy Test

Applications：

Automotive、DC Motor Control and Class D Amplifier.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

100

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

132

I_DM

Gate-to-Source Voltage

V_GS

±20

Single Pulse Avalanche Energy

Avalanche Energy ,Repetitive

Avalanche Current

750

E_AS

E_AR

3.5

I_AR

Peak Diode Recovery dv/dt

Power Dissipation

5.0

V/ns

dv/dt

150

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

1.0

175，–55 to 175

300

W/℃

℃

T_J，T_stg

T_L

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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