Datasheet > CS4N65A8RZ-G

CS4N65A8RZ-G

更新时间： 2024-06-27 12:13:41

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	590K
描述
TO-220

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CS4N65A8RZ-G 数据手册

Silicon N-Channel Power MOSFET

CS4N65 A8RZ-G

○

General Description：

V_DSS

650

CS4N65 A8RZ-G the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is TO-220,

which accords with the RoHS standard.

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

2.4

Ω

Features：

 Fast Switching



Low ON Resistance(Rdson≤2.8

Ω)

 Low Gate Charge (Typical Data: 14.5nC)

 Low Reverse transfer capacitances(Typical:3.5pF)

 100% Single Pulse avalanche energy Test

 Halogen Free

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

650

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

2.5

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

200

V/ns

E_AS

5.0

dv/dt

0.60

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

W/℃

℃

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2023V01

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