Datasheet > CS300N04 AR

CS300N04 AR

更新时间： 2024-04-09 19:00:15

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华润微 - CRMICRO		/
页数	文件大小	规格书
10页	507K
描述
TO-262

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CS300N04 AR 数据手册

Silicon N-Channel Power MOSFET

CS300N04 AR

○

General Description：

V_DSS

I_D_（

300

120

271.7

1.6

CS300N04 AR, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-262, which accords with the RoHS standard.

Features：

Silicon limited current^）

I_D_（

Package limited^）

R_DS(ON)Typ

mΩ

l Fast Switching

l Low ON Resistance(Rdson≤2.0 mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

l BLDC Motor drive applications

Half-bridge and full-bridge topologies

Synchronous rectifier applications

DC/DC and AC/DC converters

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current T_C= 25 °C

300

^（Silicon limited current^）

Continuous Drain Current TC = 25 °C（Package limited）

I_D

120

Continuous Drain Current TC = 100 °C（Package limited）

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

120

480

I_DM

V_GS

±20

800

Avalanche Energy

E_AS

Power Dissipation T_C= 25 °C

271.7

P_D

Derating Factor above 25°C

2.17

W/℃

℃

Operating Junction and Storage Temperature Range

MaximumTemperature for Soldering

T_J，T_stg

150，–55 to 150

300

T_L

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