Datasheet > CS240N06A8

CS240N06A8

更新时间： 2024-04-09 18:58:59

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华润微 - CRMICRO		/
页数	文件大小	规格书
10页	406K
描述
TO-220

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CS240N06A8 数据手册

Silicon N-Channel Power MOSFET

CS240N06 A8

○

General Description：

V_DSS

I_D

240

120

（

）

Silicon limited current

CS240N06 A8, the silicon N-channel Enhanced

VDMOSFETs, is obtained by advanced Trench Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

I_D

（

）

Package limited current

P_D(T_C=25℃)

297.6

R_DS(ON)Typ

2.5

mΩ

miniaturization and higher efficiency. The package form is

TO-220AB, which accords with the RoHS standard.

Features：

l Fast Switching

l Low ON Resistance

l Low Gate Charge

l Low Reverse transfer capacitances(Typical:504pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（T_J= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

240

Continuous Drain Current T_C= 25 °C_（

Continuous Drain Current T_C= 25 °C

）

Silicon limited

I_D

120

^（Package limited^）

120

Continuous Drain Current T_C= 100 °C

^（Package limited^）

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

480

I_DM

V_GS

±20

1089

297.6

2.38

Single Pulse Avalanche Energy

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

E_AS

P_D

W/℃

℃

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

T_J，T_stg

150，–55 to 150

300

T_L

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