Datasheet > CS223-4NTRPBFREE

CS223-4NTRPBFREE

更新时间： 2024-10-01 03:31:03

品牌	Logo	应用领域
CENTRAL		栅栅极
页数	文件大小	规格书
2页	366K
描述
Silicon Controlled Rectifier, 800V V(DRM),

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中文翻译

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技术参数
数据手册

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CS223-4NTRPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.84	关态电压最小值的临界上升速率：	10 V/us
最大直流栅极触发电流：	0.2 mA	最大直流栅极触发电压：	0.8 V
最大维持电流：	2 mA	最大漏电流：	0.2 mA
通态非重复峰值电流：	30 A	最高工作温度：	125 °C
最低工作温度：	-40 °C	断态重复峰值电压：	800 V
子类别：	Silicon Controlled Rectifiers	表面贴装：	YES
触发设备类型：	SCR

CS223-4NTRPBFREE 数据手册

CS223-4M

CS223-4N

www.centralsemi.com

SURFACE MOUNT

4 AMP SILICON SCR

600 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CS223-4M series

type is an Epoxy Molded Silicon Controlled Rectifier

designed for sensing circuit applications and control

systems.

MARKING: FULL PART NUMBER

SOT-223 CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

CS223-4M

CS223-4N UNITS

Peak Repetitive Off-State Voltage

600

800

DRM RRM

RMS On-State Current (T =85°C)

4.0

T(RMS)

Peak One Cycle Surge, t=10ms

I²t Value for Fusing, t=10ms

Peak Gate Power, tp=20μs

Average Gate Power Dissipation

Peak Gate Current, tp=20μs

Critical Rate of Rise of On-State Current

Operating Junction Temperature

Storage Temperature

4.5

A²s

TSM

I²t

3.0

0.2

G(AV)

1.2

di/dt

A/μs

°C

°C/W

-40 to +125

-40 to +150

62.5

stg

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

μA

, I

Rated V

, V

, R =1KΩ

200

2.0

0.8

2.2

DRM RRM

DRM RRM GK

, I

Rated V

, V , R =1KΩ, T =125°C

μA

DRM RRM

DRM RRM GK

V =12V, R =10Ω

μA

I =50mA, R =1KΩ

0.25

0.55

2.0

V =12V, R =10Ω

=8.0A, tp=380μs

dv/dt

V = / V

, R =1KΩ, T =125°C

V/μs

DRM GK

R2 (30-November 2011)

中文翻译

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