Datasheet > CRMD0313C

CRMD0313C

更新时间： 2024-03-03 10:07:58

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
11页	1258K
描述
PDFN5x6D

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数据手册

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CRMD0313C 数据手册

CRMD0313C

30V Complementary Power MOSFET

华润微电子(重庆)有限公司

Features

Product Summary

Symbol

V_DS

N-Ch

30V

P-Ch

-30V

• Uses CRM(CQ) advanced Trench technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

R_{DS(on) typ.}

I_D

10mΩ

22A

20mΩ

-22A

100% DVDS Tested

Applications

• Motor drive

100% Avalanche Tested

Package Marking and Ordering Information

Part #

Marking

Package

Packing Reel Size

Taping N/A

Tape Width

N/A

Qty

CRMD0313C

PDFN5x6D

4000pcs

Absolute Maximum Ratings

Parameter

Maximum

Symbol

Unit

N-Ch

P-Ch

V_DS

I_D

Drain-source voltage

-30

Continuous drain current T_C= 25°C (Silicon limit)

Continuous drain current T_C= 25°C (Package limit)

-27

-22

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

-88

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)

Gate-Source voltage

V_GS

±20

24.8

±20

24.8

Power dissipation (T_C= 25°C)

P_tot

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Rev1.1

©China Resources Microelectronics (Chongqing) Limited

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