CRF24010

更新时间： 2024-01-27 02:00:16

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

CRF24010 技术参数

PRELIMINARY

CRF240ꢀ0

ꢀ0 W, SiC RF Power MESFET

Cree’s CRF24010 is an unmatched silicon carbide (SiC) RF power Metal-

Semiconductor Field-Effect Transistor (MESFET). SiC has superior

properties compared to silicon or gallium arsenide, including higher

breakdown voltage, higher saturated electron drift velocity, and higher

thermal conductivity. SiC MESFETs offer greater efﬁciency, greater power

density, and wider bandwidths compared to Si and GaAs transistors.

FEATURES

APPLICATIONS

• 15 dB Small Signal Gain

• Wideband Military Communications

• Secure Comms for Homeland Defense

• Class A, A/B Ampliﬁers

• High Efﬁciency

• 10 W minimum P_1dB

• Up to 2700 MHz Operation

• 48 V Operation

• TDMA, EDGE, CDMA, W-CDMA

• Broadband Ampliﬁers

• High Breakdown Voltage

• High Temperature Operation

• MMDS

Typical Performance

•

Drain Efﬁciency of 45% at 1950 MHz

IMD -31 dBc at 1950 MHz

15 dB Gain at 1950 MHz

Note: Measured in ampliﬁer circuit CRF24010-TB at V_DS= 48 V, I_DQ= 500 mA.

Subject to change without notice.

www.cree.com/wireless

ꢀ

12 3 4 5 6 7...10

下载PDF