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CRCW08056810FKEA

更新时间： 2024-10-03 01:09:23
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恩智浦 - NXP /
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14页 448K
描述
RF LDMOS Wideband 2-Stage Power Amplifiers

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Document Number: MW5IC970N  
Rev. 3, 1/2010  
Freescale Semiconductor  
Technical Data  
RF LDMOS Wideband 2-Stage  
Power Amplifiers  
Designed for broadband commercial and industrial applications with  
frequencies from 132 MHz to 960 MHz. The high gain and broadband  
performance of these devices make them ideal for large- signal, common- source  
amplifier applications in 28 volt base station equipment. These devices have a  
2-stage design with off-chip matching for the input, interstage and output  
networks to cover the desired frequency band.  
MW5IC970NBR1  
MW5IC970GNBR1  
800-900 MHz, 70 W,ꢀ28 V  
RF LDMOS WIDEBAND  
2-STAGE POWER AMPLIFIERS  
• Typical Performance: 800 MHz, 28 Volts, IDQ1 = 80 mA,  
IDQ2 = 650 mA, Pout = 70 Watts PEP  
Power Gain — 30 dB  
Drain Efficiency — 48%  
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 850 MHz, 70 Watts CW  
Output Power  
Features  
CASE 1329-09  
TO-272 WB-16  
PLASTIC  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• Integrated Quiescent Current Temperature Compensation  
with Enable/Disable Function  
MW5IC970NBR1  
• On-Chip Current Mirror gm Reference FET for Self Biasing Application (1)  
• Integrated ESD Protection  
• 200°C Capable Plastic Package  
• RoHS Compliant  
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.  
CASE 1329A-04  
TO-272 WB-16 GULL  
PLASTIC  
MW5IC970GNBR1  
V
RD2  
GND  
V
1
2
3
4
5
GND  
NC  
16  
15  
Quiescent Current  
Temperature Compensation  
V
V
/V  
RD2  
RG2 GS2  
(1)  
V
V
/V  
RG2 GS2  
/V  
RG1 GS1  
RF  
in1  
/V  
RG1 GS1  
V
D2/  
RF  
GND  
6
14  
out2  
V
RD1  
/RF  
7
8
9
10  
RF  
V
D2  
/RF  
V
V
in1  
out2  
D1  
out1  
/RF  
out1  
D1  
13  
12  
NC  
GND  
V
RD1  
RF  
in2  
GND  
11  
V
V
/RF  
/RF  
D1  
out1  
(Top View)  
D1  
out1  
RF  
in2  
Note: Exposed backside flag is source  
terminal for transistors.  
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
ꢀꢁ1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control  
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.  
© Freescale Semiconductor, Inc., 2006, 2008, 2010. All rights reserved.  
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与CRCW08056810FKEA相关器件

型号 品牌 获取价格 描述 数据表
CRCW08056810FRT1-E3 VISHAY

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 		RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 1%, 100ppm, 681ohm, SURFACE MOUNT, 0805, CHIP
CRCW08056810FRT5-PB VISHAY

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 		RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 1%, 100ppm, 681ohm, SURFACE MOUNT, 0805, CHIP
CRCW08056811F100RT1 VISHAY

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 		Fixed Resistor, Metal Glaze/thick Film, 0.125W, 6810ohm, 150V, 1% +/-Tol, 100ppm/Cel, Surf
CRCW08056811F100RT1-E3 VISHAY

获取价格

 		RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 1%, 100ppm, 6810ohm, SURFACE MOUNT, 0805, CHIP
CRCW08056811F100RT6 VISHAY

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 		Fixed Resistor, Metal Glaze/thick Film, 0.125W, 6810ohm, 150V, 1% +/-Tol, -100,100ppm/Cel,
CRCW08056811FRT1-E3 VISHAY

获取价格

 		RESISTOR, METAL GLAZE/THICK FILM, 0.1W, 1%, 100ppm, 6810ohm, SURFACE MOUNT, 0805, CHIP
CRCW08056811FRT5 VISHAY

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 		Fixed Resistor, Metal Glaze/thick Film, 0.125W, 6810ohm, 150V, 1% +/-Tol, 100ppm/Cel, Surf
CRCW08056812DRT1 VISHAY

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 		Fixed Resistor, Metal Glaze/thick Film, 0.1W, 68100ohm, 150V, 0.5% +/-Tol, 100ppm/Cel, Sur
CRCW08056812DRT5 VISHAY

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 		Fixed Resistor, Metal Glaze/thick Film, 0.1W, 68100ohm, 150V, 0.5% +/-Tol, 100ppm/Cel, Sur
CRCW08056812F100RT5-E3 VISHAY

获取价格

 		RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 1%, 100ppm, 68100ohm, SURFACE MOUNT, 0805, CHIP

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