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CQX17 PDF预览

CQX17

更新时间: 2024-01-29 21:35:06
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 半导体红外LED光电二极管
页数 文件大小 规格书
3页 153K
描述
GaAs INFRARED EMITTING DIODE

CQX17 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.65Is Samacsys:N
Base Number Matches:1

CQX17 数据手册

 浏览型号CQX17的Datasheet PDF文件第2页浏览型号CQX17的Datasheet PDF文件第3页 
CQX15, CQX17  
GaAs INFRARED EMITTING DIODE  
DESCRIPTION  
PACKAGE DIMENSIONS  
The CQX15 and CQX17 series are  
940nm LEDs in a wide angle, TO-46  
package.  
0.209 (5.31)  
0.184 (4.67)  
0.030 (0.76)  
0.155 (3.94)  
MAX  
NOM  
FEATURES  
• Good optical to mechanical alignment  
1.00 (25.4)  
MIN  
• Mechanically and wavelength matched  
SCHEMATIC  
ANODE  
(CASE)  
to the TO-18 series phototransistor  
3
• Hermetically sealed package  
• High irradiance level  
ANODE  
(Connected  
To Case)  
0.100 (2.54)  
0.050 (1.27)  
• European “Pro Electron” registered  
CATHODE  
1
1
3
0.040 (1.02)  
0.040 (1.02)  
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.  
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.  
3. RMA flux is recommended.  
Ø0.020 (0.51) 2X  
45°  
4. Methanol or isopropyl alcohols are recommended as cleaning  
agents.  
NOTES:  
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.  
6. As long as leads are not under any stress or spring tension  
7. Total power output, PO, is the total power radiated by the device into  
1. Dimensions for all drawings are in inches (mm).  
2. Tolerance of ± .010 (.25) on all non-nominal dimensions  
unless otherwise specified.  
a solid angle of 2 ! steradians.  
(T = 25°C unless otherwise specified)  
ABSOLUTE MAXIMUM RATINGS  
A
Parameter  
Operating Temperature  
Storage Temperature  
Soldering Temperature (Iron)(3,4,5 and 6)  
Soldering Temperature (Flow)(3,4 and 6)  
Continuous Forward Current  
Forward Current (pw, 1µs; 200Hz)  
Reverse Voltage  
Symbol  
TOPR  
TSTG  
TSOL-I  
TSOL-F  
IF  
Rating  
-65 to +125  
-65 to +150  
240 for 5 sec  
260 for 10 sec  
100  
Unit  
°C  
°C  
°C  
°C  
mA  
A
IF  
VR  
10  
3
V
Power Dissipation (TA = 25°C)(1)  
Power Dissipation (TC = 25°C)(2)  
PD  
PD  
170  
1.3  
mW  
W
(TA =25°C) (All measurements made under pulse conditions)  
ELECTRICAL / OPTICAL CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
MIN  
5.4  
1.5  
TYP  
940  
±40  
1.0  
1.0  
MAX  
1.7  
10  
UNITS  
nm  
Deg.  
V
Peak Emission Wavelength  
Emission Angle at 1/2 Power  
Forward Voltage  
Reverse Leakage Current  
Total Power CQX15 (7)  
Total Power CQX17 (7)  
Rise Time 0-90% of output  
Fall Time 100-10% of output  
IF = 100 mA  
"
PE  
#
VF  
IR  
PO  
PO  
tr  
IF = 100 mA  
VR = 3 V  
IF = 100 mA  
IF = 100 mA  
µA  
mW  
mW  
µs  
tf  
µs  
2001 Fairchild Semiconductor Corporation  
DS300285 4/26/01  
1 OF 3  
www.fairchildsemi.com  

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