CQX15, CQX17
GaAs INFRARED EMITTING DIODE
DESCRIPTION
PACKAGE DIMENSIONS
The CQX15 and CQX17 series are
940nm LEDs in a wide angle, TO-46
package.
0.209 (5.31)
0.184 (4.67)
0.030 (0.76)
0.155 (3.94)
MAX
NOM
FEATURES
• Good optical to mechanical alignment
1.00 (25.4)
MIN
• Mechanically and wavelength matched
SCHEMATIC
ANODE
(CASE)
to the TO-18 series phototransistor
3
• Hermetically sealed package
• High irradiance level
ANODE
(Connected
To Case)
0.100 (2.54)
0.050 (1.27)
• European “Pro Electron” registered
CATHODE
1
1
3
0.040 (1.02)
0.040 (1.02)
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
Ø0.020 (0.51) 2X
45°
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
NOTES:
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, PO, is the total power radiated by the device into
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
a solid angle of 2 ! steradians.
(T = 25°C unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS
A
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Continuous Forward Current
Forward Current (pw, 1µs; 200Hz)
Reverse Voltage
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
IF
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
Unit
°C
°C
°C
°C
mA
A
IF
VR
10
3
V
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
PD
PD
170
1.3
mW
W
(TA =25°C) (All measurements made under pulse conditions)
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
—
—
—
—
5.4
1.5
—
TYP
940
±40
—
—
—
—
1.0
1.0
MAX
—
—
1.7
10
—
—
—
—
UNITS
nm
Deg.
V
Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
Reverse Leakage Current
Total Power CQX15 (7)
Total Power CQX17 (7)
Rise Time 0-90% of output
Fall Time 100-10% of output
IF = 100 mA
"
PE
#
VF
IR
PO
PO
tr
IF = 100 mA
VR = 3 V
IF = 100 mA
IF = 100 mA
µA
mW
mW
µs
tf
—
µs
2001 Fairchild Semiconductor Corporation
DS300285 4/26/01
1 OF 3
www.fairchildsemi.com