Datasheet > CPM2-1200-0025B

CPM2-1200-0025B

更新时间： 2024-02-25 16:16:01

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描述
Silicon Carbide Power MOSFET C2M MOSFET Technology

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数据手册

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CPM2-1200-0025B 数据手册

V_DS

1200 V

98 A

I_D@ 25˚C

R_DS(on)

CPM2-1200-0025B

25 mΩ

Silicon Carbide Power MOSFET

C2M^TMMOSFET Technology

N-Channel Enhancement Mode

Features

Chip Outline

•ꢀ High Blocking Voltage with Low On-Resistance

•ꢀ High Speed Switching with Low Capacitances

•ꢀ Easy to Parallel and Simple to Drive

•ꢀ Avalanche Ruggedness

•ꢀ Resistant to Latch-Up

•ꢀ Halogen Free, RoHS Compliant

Beneﬁts

•ꢀ HigherꢀSystemꢀEfﬁciency

•ꢀ Reduced Cooling Requirements

•ꢀ Increased Power Density

•ꢀ Increased System Switching Frequencyy

Applications

Part Number

CPM2-1200-0025B

Die Size (mm)

4.04 x 6.44

•ꢀ Solar Inverters

•ꢀ Switch Mode Power Supplies

•ꢀ High Voltage DC/DC converters

•ꢀ Battery Chargers

•ꢀ Motor Drive

•ꢀ Pulsed Power Applications

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

Drain - Source Voltage

Value

Unit

Test Conditions

Note

V_GS= 0 V, I_Dꢀ=ꢀ100ꢀμA

1200

-10/+25

-5/+20

V_DSmax

V_GSmax

V_GSop

Gate - Source Voltage

Absolute maximum values, AC (f >1 Hz)

Recommended operational values

V_GS=20 V, T_C=ꢀ25˚C

V_GS=20 V, T_C=ꢀ100˚C

Continuous Drain Current

Note 1

I_D

Pulsed Drain Current

250

I_D(pulse)

Pulse width t_Plimited by T_jmax

-40 to

+175

OperatingꢀJunctionꢀandꢀStorageꢀTemperature

Maximum Processing Temperature

˚C

T , T_stg

325

10 min. maximum

T_Proc

Note (1): Assumes a R_θJC< 0.27 K/W

CPM2-1200-0025B Rev. C, 01-2016

12 3 4 5 6 7

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