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CPH5515

更新时间： 2024-01-13 04:23:50
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
3页 26K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-25

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中文翻译

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CPH5515 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-G5
针数：5Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.58其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：50
JESD-30 代码：R-PDSO-G5元件数量：2
端子数量：5最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
最大功率耗散 (Abs)：0.5 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：250 MHzBase Number Matches：1

CPH5515 数据手册

 浏览型号CPH5515的Datasheet PDF文件第2页浏览型号CPH5515的Datasheet PDF文件第3页 
Ordering number : ENN7455  
NPN Epitaxial Planar Silicon Transistor  
CPH5515  
Switching Applications with Bias Resistance  
Features  
Package Dimensions  
unit : mm  
2218  
•
On-chip bias resistance (R1=10kΩ, R2=10kΩ).  
Composite type with 2 transistors contained in the  
CPH package currently in use, improving the mount-  
ing efficiency greatly.  
•
[CPH5515]  
2.9  
4
0.15  
•
•
5
3
2
The CPH5515 is formed with two chips, being equiva-  
lent to the 2SC3402, placed in one package.  
Excellent in thermal equilibrium and pair capability.  
0.05  
1
0.95  
0.4  
1 : Collector1  
2 : Collector2  
3 : Base2  
4 : Emitter Common  
5 : Base1  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
0.4  
SANYO : CPH5  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
50  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
50  
V
10  
V
I
100  
mA  
mA  
mW  
mW  
°C  
C
Collector Current (Pulse)  
Collector Dissipation  
I
200  
CP  
P
1unit  
350  
C
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
P
T
500  
Tj  
Tstg  
150  
--55 to +150  
°C  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
0.1  
I
I
V
=40V, I =0  
µA  
µA  
µA  
CBO  
CB  
CE  
EB  
CE  
CE  
CB  
E
Collector Cutoff Current  
V
V
V
V
V
=40V, I =0  
0.5  
CEO  
E
Emitter Cutoff Current  
DC Current Gain  
I
=5V, I =0  
170  
50  
250  
360  
EBO  
C
h
FE  
=5V, I =10mA  
C
Gain-Bandwidth Product  
Output Capacitance  
f
T
=10V, I =5mA  
C
250  
3.3  
MHz  
pF  
Cob  
=10V, f=1MHz  
Note : The specifications shown above are for each individual transistor.  
Marking : 3V  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N2503 TS IM TA-100415 No.7455-1/3  
123

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