Datasheet > CPH3453-TL-H

CPH3453-TL-H

更新时间： 2024-02-06 13:32:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	221K
描述
TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,300MA I(D),SOT-346

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技术参数
数据手册

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CPH3453-TL-H 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	0.3 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e6
湿度敏感等级：	1	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	1 W	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Tin/Bismuth (Sn/Bi)
Base Number Matches：	1

CPH3453-TL-H 数据手册

Ordering number : ENA1701

ON Semiconductor

DATA SHEET

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

CPH3453

Features

•

Low ON-resistance.

•

2.5V drive.

•

Halogen free compliance.

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

250

±10

300

1.2

DSS

GSS

Drain Current (Pulse)

PW≤10μs, duty cycle 1%

≤

Allowable Power Dissipation

Channel Temperature

Storage Temperature

When mounted on ceramic substrate (900mm²0.8mm)

1.0

Tch

150

°C

Tstg

--55 to +150

at Ta=25°C

Electrical Characteristics

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

250

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=1mA, V =0V

D GS

(BR)DSS

=250V, V =0V

100

±10

1.3

DSS

GSS

=±8V, V =0V

(off)

=10V, I =1mA

0.4

0.6

yfs

Forward Transfer Admittance

=10V, I =150mA

(on)1

=150mA, V =4.5V

8.5

Static Drain-to-Source On-State Resistance

(on)2

=75mA, V =2.5V

Marking : LK

Continued on next page.

Jan-2011, Rev. 0

Publication Order Number:

www.onsemi.com

CPH3453/D

12 3 4

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