Datasheet > CPH3455-TL-H

CPH3455-TL-H

更新时间： 2023-09-03 20:33:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	176K
描述
单 N 沟道，功率 MOSFET，35V，3A，104mΩ

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中文翻译

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技术参数
数据手册
替代型号

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CPH3455-TL-H 技术参数

是否无铅：	不含铅	生命周期：	Active
针数：	3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	Factory Lead Time：	1 week
风险等级：	5.29	配置：	Single
最大漏极电流 (Abs) (ID)：	3 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e6	湿度敏感等级：	1
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	1 W	子类别：	FET General Purpose Powers
表面贴装：	YES	端子面层：	Tin/Bismuth (Sn/Bi)
Base Number Matches：	1

CPH3455-TL-H 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel

MAX

I MAX

(BR)DSS

DS(ON)

35 V

104 mW @ 10 V

173 mW @ 4.5 V

3 A

35 V, 104 mW, 3 A

208 mW @ 4 V

CPH3455

Description

This Power MOSFET is produced using onsemi’s trench

technology, which is specifically designed to minimize gate charge

and low on resistance. This device is suitable for applications with

low gate charge driving or low on resistance requirements.

CPH3

CASE 318BA

Features

ELECTRICAL CONNECTION

• Low On−Resistance

N−Channel

• 4V Drive

• Pb−Free, Halogen Free and RoHS Compliance

Typical Applications

• Load Switch

• Motor Drive

1: Gate

2: Source

3: Drain

MAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Drain Current (DC)

Symbol

Value

Unit

DSS

GSS

MARKING DIAGRAM

Drain Current (Pulse)

PW ≤ 10 ms, duty cycle ≤ 1%

Power Dissipation

When mounted on ceramic substrate

(900 mm x 0.8 mm)

Junction Temperature

Storage Temperature

150

°C

stg

−55 to +150

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. This product is designed to “ESD immunity <200 V*”, so please take care

when handling.

= Specific Device Code

= Year

= Month

= Week

*Machine Model

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Ambient

125

°C/W

When mounted on ceramic substrate

(900 mm x 0.8 mm)

Publication Order Number:

September, 2022 − Rev. 4

CPH3455/D

12 3 4 5 6 7

中文翻译

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CPH3455-TL-H 替代型号

型号	品牌	替代类型	描述	数据表
CPH3455-TL-W	ONSEMI	类似代替	Single N-Channel Power MOSFET, 35V, 3A, 104mΩ, 3000-REEL
CPH3455-TL-H	SANYO	功能相似	General-Purpose Switching Device Applications

与CPH3455-TL-H相关器件

型号	品牌	获取价格	描述	数据表
CPH3455-TL-W	ONSEMI	获取价格	Single N-Channel Power MOSFET, 35V, 3A, 104mΩ, 3000-REEL
CPH3456	SANYO	获取价格	General-Purpose Switching Device
CPH3456_12	SANYO	获取价格	General-Purpose Switching Device Applications
CPH3456TL	ONSEMI	获取价格	3500mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE, CPH3, SC-95, SC-96, SOT-45
CPH3456-TL-H	SANYO	获取价格	General-Purpose Switching Device Applications
CPH3456-TL-W	ONSEMI	获取价格	Single N-Channel Power MOSFET 20V, 3.5A, 71mΩ
CPH3457	SANYO	获取价格	General-Purpose Switching Device Applications
CPH3457	ONSEMI	获取价格	3000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE, CPH3, SC-95, SC-96, SOT-45
CPH3457_12	SANYO	获取价格	General-Purpose Switching Device Applications
CPH3457TL	ONSEMI	获取价格	3000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE, CPH3, SC-95, SC-96, SOT-45

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