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CPH3248

更新时间： 2024-01-31 13:15:24
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管光电二极管
页数 文件大小 规格书
4页 37K
描述
NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

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中文翻译

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CPH3248 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.55
Is Samacsys：N最大集电极电流 (IC)：2 A
集电极-发射极最大电压：100 V配置：SINGLE
最小直流电流增益 (hFE)：300JESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN最大功率耗散 (Abs)：0.9 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：300 MHz
Base Number Matches：1

CPH3248 数据手册

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Ordering number : ENA0401  
SANYO Sem iconductors  
DATA S HEET  
NPN Epitaxial Planar Silicon Transistor  
CPH3248  
High-Voltage Switching Applications  
Applications  
•
DC / DC converters, relay drivers, lamp drivers, motor drivers, inverters.  
Features  
•
•
•
Adoption of FBET, MBIT processes.  
Large current capacitance.  
Low collector-to-emitter saturation voltage.  
• High-speed switching.  
• Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm).  
• High allowable power dissipation.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
120  
120  
100  
6.5  
2
CBO  
V
V
CES  
CEO  
EBO  
V
V
V
V
I
A
C
Collector Current (Pulse)  
Base Current  
I
3
A
CP  
I
B
400  
0.9  
150  
mA  
W
°C  
°C  
Collector Dissipation  
P
Mounted on a ceramic board (600mm2✕0.8mm)  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
I
V
CB  
V
EB  
V
CE  
V
CE  
V
CB  
=80V, I =0A  
1
µA  
µA  
CBO  
E
Emitter Cutoff Current  
DC Current Gain  
I
=4V, I =0A  
1
EBO  
C
h
FE  
=5V, I =100mA  
300  
600  
C
Gain-Bandwidth Product  
Output Capacitance  
Marking : DT  
f
=10V, I =300mA  
C
300  
13  
MHz  
pF  
T
Cob  
=10V, f=1MHz  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
82306 / 60506EA MS IM TB-00002344 No. A0401-1/4  
1234

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