CMZB68~CMZB390
TOSHIBA Zener Diode Silicon Junction
CMZB68~CMZB390
○Communication, Control and
Unit: mm
Measurement Equipment
○Constant Voltage Regulation
②
•
•
•
Power dissipation: P = 1.0 W
Zener voltage: V = 68 to 390 V
Z
Suitable for high-density board assembly due to the use of a small
surface-mount package, M−FLAT
TM
①
0.16
Absolute Maximum Ratings (Ta = 25°C)
1.75 ± 0.1
+ 0.2
2.4 − 0.1
Characteristics
Power dissipation
Symbol
P
Rating
Unit
1.0 (Note 1)
150
W
°C
°C
Junction temperature
T
j
① ANODE
② CATHODE
Storage temperature range
T
stg
−55 to 150
Note : Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature / current / voltage, etc.) are within the
absolute maximum ratings.
JEDEC
―
―
JEITA
TOSHIBA
3-4E1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 0.023 g (typ.)
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Ta = 40°C
Device mounted on a glass-epoxy board
Board size: 50 mm × 50 mm
Land pattern: 6 mm × 6 mm
Board thickness: 1.6 mm
Land pattern dimensions for reference only
Unit: mm
1.4
3.0
1.4
1
2011-06-20